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MPSA06RLRM PDF预览

MPSA06RLRM

更新时间: 2024-11-20 04:39:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
8页 115K
描述
Amplifier Transistors

MPSA06RLRM 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.14最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn80Pb20)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MPSA06RLRM 数据手册

 浏览型号MPSA06RLRM的Datasheet PDF文件第2页浏览型号MPSA06RLRM的Datasheet PDF文件第3页浏览型号MPSA06RLRM的Datasheet PDF文件第4页浏览型号MPSA06RLRM的Datasheet PDF文件第5页浏览型号MPSA06RLRM的Datasheet PDF文件第6页浏览型号MPSA06RLRM的Datasheet PDF文件第7页 
MPSA05, MPSA06, MPSA55,  
MPSA56  
MPSA06 and MPSA56 are Preferred Devices  
Amplifier Transistors  
Voltage and Current are Negative  
for PNP Transistors  
http://onsemi.com  
NPN  
PNP  
NPN  
COLLECTOR  
3
COLLECTOR  
3
MPSA05, MPSA06  
PNP  
MPSA55, MPSA56  
2
2
BASE  
BASE  
MARKING DIAGRAM  
1
1
TO−92  
CASE 29  
STYLE 1  
EMITTER  
EMITTER  
MPS  
Axxx  
YWW  
STYLE 1  
MPSA05, MPSA06  
STYLE 1  
MPSA55, MPSA56  
MAXIMUM RATINGS  
MPSA = Specific Device Code  
1
Rating  
Symbol  
Value  
Unit  
xxx  
Y
= 05, 06, 55 or 56  
= Year  
2
3
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
WW  
= Work Week  
MPSA05, MPSA55  
MPSA06, MPSA56  
60  
80  
ORDERING INFORMATION  
CollectorBase Voltage  
Vdc  
MPSA05, MPSA55  
MPSA06, MPSA56  
60  
80  
Device  
MPSA05  
Package  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
Shipping  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
2000/Ammo Pack  
5000 Units/Box  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current − Continuous  
I
C
500  
mAdc  
MPSA05RLRA  
MPSA05RLRM  
MPSA06  
Total Device Dissipation  
P
P
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation  
D
MPSA06RLRA  
MPSA06RLRM  
MPSA06RLRP  
MPSA55  
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
MPSA55RLRA  
MPSA56  
2000/Tape & Reel  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
2000/Ammo Pack  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction to Ambient  
R
200  
°C/W  
θ
JA  
(Note 1.)  
MPSA56RLRA  
MPSA56RLRM  
MPSA56RLRP  
Thermal Resistance,  
Junction to Case  
R
83.3  
°C/W  
θ
JC  
1. R  
is measured with the device soldered into a typical printed circuit board.  
q
JA  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
October, 2001 − Rev. 1  
MPSA05/D  

MPSA06RLRM 替代型号

型号 品牌 替代类型 描述 数据表
MPSA06RLRP ONSEMI

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