Datasheet > MPSA06_11

MPSA06_11

更新时间： 2024-09-16 10:48:51

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	226K
描述
NPN Small Signal Transistor 625 mW

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中文翻译

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数据手册

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MPSA06_11 数据手册

M C C

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Micro Commercial Components

MPSA06

Features

•

NPN Silicon Epitaxial Planar Transistor for switching and

amplifier applications

NPN Small

Signal Transistor

625 mW

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

•

As complementary type,the PNP transistor is MPSA56

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Mechanical Data

TO-92

ꢀ

Marking:MPSA06

ꢀ Weight: 0.18 grams (Approx.)

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Collect to Base Voltage

Symbol

V_CBO

Value

Unit

V^CEO

V_EBO

I^C

Collect to Emitter Voltage

Emitter to Base Voltage

4.0

Collect Current

500

625

1.5

Total Power Dissipation @ T_A=25^oC

Total Power Dissipation @ T^C=25^oC

P_tot

P^tot

Thermal Resistance Junction to

Ambient

^oC/W

200

^oC

Junction Temperature

Storage Temperature

T^j

T_STG

150

-55 to 150

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Charateristic

Symbol Min Max Unit

Test Cond.

Collector Cut-off Current

I_CBO

100

nA V_CB=80V, I_E=0

Collector to Emitter

Saturatuion Voltage

V_CE(sat)

0.25

I_C=100mA, I _B=10mA

V_CE=1V, I_C=10mA

V_CE=1V, I_C=100mA

100

h_FE

DC Current Gain

V_CE=2V, I_C=20mA,

f=100MHz

f_T

V_(BR)CEO

V_(BR)EBO

Gain Bandwidth Product

100

MHz

DIMENSIONS

Collector-Emitter

Breakdown Voltage

INCHES

MIN

I_C=1mA, I _B=0

DIM

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.170

.550

.010

.130

.096

.190

.590

.020

.160

.104

Emitter-Base

Breakdown Voltage

I_E=100 A, I_C=0

Base-Emitter ON

Voltage

V_BE(ON)

1.2

I_C=10mA, I_B=1mA

Note: Valid provided that leads are kept at ambient temperature.

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Revision: A

2011/01/01

中文翻译

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