MPS6560

更新时间： 2024-11-28 22:46:03

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	72K
描述
Audio Transistor

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数据手册

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MPS6560 数据手册

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by MPS6560/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

5.0

500

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

(1)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

°C/mW

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(2)

Collector–Emitter Breakdown Voltage

5.0

—

Vdc

(BR)CEO

(I = 10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 100 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 100 Adc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = 25 Vdc, I = 0)

100

nAdc

CES

Collector Cutoff Current

(V = 20 Vdc, I = 0)

—

CBO

Emitter Cutoff Current

(V = 4.0 Vdc, I = 0)

—

EBO

EB(off)

1. R

is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width

300 s; Duty Cycle

2.0%.

REV 1

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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MPS6560-18R	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
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MPS6560-5T1	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1,
MPS6560APMLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
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MPS6560G	ONSEMI	获取价格	Audio Transistor NPN Silicon
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