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MPS404ARL PDF预览

MPS404ARL

更新时间: 2024-11-28 20:07:23
品牌 Logo 应用领域
安森美 - ONSEMI 斩波器晶体管
页数 文件大小 规格书
35页 389K
描述
150mA, 35V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

MPS404ARL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.47其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:CHOPPER
晶体管元件材料:SILICONBase Number Matches:1

MPS404ARL 数据手册

 浏览型号MPS404ARL的Datasheet PDF文件第2页浏览型号MPS404ARL的Datasheet PDF文件第3页浏览型号MPS404ARL的Datasheet PDF文件第4页浏览型号MPS404ARL的Datasheet PDF文件第5页浏览型号MPS404ARL的Datasheet PDF文件第6页浏览型号MPS404ARL的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
Motorola Preferred Device  
2
BASE  
1
EMITTER  
MAXIMUM RATINGS  
1
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
V
CEO  
V
CBO  
V
EBO  
–35  
–40  
Vdc  
Vdc  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
–25  
Vdc  
Collector Current — Continuous  
I
C
–150  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
(1)  
R
JA  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
83.3  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(2)  
CollectorEmitter Breakdown Voltage  
(I = –10 mAdc, I = 0)  
V
V
–35  
–40  
–25  
Vdc  
Vdc  
(BR)CEO  
C
B
CollectorBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = –10 Vdc, I = 0)  
I
–100  
–100  
nAdc  
nAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = –10 Vdc, I = 0)  
E
I
EBO  
BE  
C
2. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–525  

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