Datasheet > MPS3638A

MPS3638A

更新时间： 2024-11-26 05:50:03

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	152K
描述
PNP Silicon Epitaxial Planar Transistor

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MPS3638A 数据手册

MPS3638A

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications.

1.Emitter 2.Base 3.Collector

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

500

Power Dissipation

P_tot

625

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 10 V, -I_C= 1 mA

at -V_CE= 10 V, -I_C= 10 mA

at -V_CE= 1 V, -I_C= 50 mA

at -V_CE= 2 V, -I_C= 300 mA

Collector Cutoff Current

at -V_CE= 15 V

Emitter Cutoff Current

at -V_EB= 3 V

Collector Base Breakdown Voltage

at -I_C= 100 µA

h_FE

100

-I_CES

-I_EBO

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

Collector Emitter Breakdown Voltage

at -I_C= 10 mA

Emitter Base Breakdown Voltage

at -I_E= 100 µA

Collector Emitter Saturation Voltage

at -I_C= 50 mA, -I_B= 2.5 mA

at -I_C= 300 mA, -I_B= 30 mA

-V_CEsat

0.25

Base Emitter Saturation Voltage

at -I_C= 50 mA, -I_B= 2.5 mA

at -I_C= 300 mA, -I_B= 30 mA

-V_BEsat

1.1

0.8

Gain Bandwidth Product

at -V_CE= 3 V, -I_C= 50 mA, f = 100 MHz

f_T

150

MHz

Output Capacitance

at -V_CB= 10 V, f = 1 MHz

C_cbo

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 14/03/2007

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