Datasheet > MPS3640RLRE

MPS3640RLRE

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
34页	338K
描述
80mA, 12V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

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MPS3640RLRE 数据手册

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

CEO

CBO

EBO

–12

–4.0

–80

Vdc

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

–12

–4.0

—

Vdc

(BR)CES

CEO(sus)

(I = –100 µAdc, V

C BE

= 0)

(1)

Collector–Emitter Sustaining Voltage

(I = –10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = –100 Adc, I = 0)

Vdc

(BR)CBO

(BR)EBO

Emitter–Base Breakdown Voltage

(I = –100 Adc, I = 0)

Vdc

Collector Cutoff Current

µAdc

CES

= –6.0 Vdc, V

= 0)

= 0, T = 65°C)

—

–0.01

–1.0

Base Current

(V = –6.0 Vdc, V

—

–10

nAdc

= 0)

1. Pulse Test: Pulse Width

300 s, Duty Cycle

2.0%.

2–552

Motorola Small–Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7...34

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