MPS3638ARLRE

更新时间： 2024-11-26 13:11:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体开关晶体管
页数	文件大小	规格书
8页	323K
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MPS3638ARLRE 数据手册

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SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

–25

Unit

Vdc

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

CEO

–25

Vdc

CES

CBO

EBO

–25

Vdc

–4.0

–500

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

(1)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

–25

–4.0

—

Vdc

Adc

(BR)CES

CEO(sus)

(I = –100 Adc, V

C BE

= 0)

(2)

Collector–Emitter Sustaining Voltage

(I = –10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = –100 Adc, I = 0)

(BR)CBO

(BR)EBO

Emitter–Base Breakdown Voltage

(I = –100 Adc, I = 0)

Collector Cutoff Current

CES

= –15 Vdc, V

= 0)

—

–0.035

–2.0

= 0, T = –65°C)

Emitter Cutoff Current

(V = –3.0 V, I = 0)

—

–35

EBO

Base Current

(V = –15 Vdc, V

—

–0.035

Adc

= 0)

CE BE

1. R

is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width

300 s; Duty Cycle

2.0%.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7 8

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