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MPN3700RLRM PDF预览

MPN3700RLRM

更新时间: 2024-11-10 12:59:31
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关测试高压
页数 文件大小 规格书
4页 59K
描述
200V, SILICON, PIN DIODE, TO-92, PLASTIC, CASE 182-06, TO-226AC, 2 PIN

MPN3700RLRM 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:O-PBCY-T2
针数:3Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.82
Is Samacsys:N应用:SWITCHING
最小击穿电压:200 V配置:SINGLE
最大二极管电容:1 pF二极管元件材料:SILICON
最大二极管正向电阻:1 Ω二极管类型:PIN DIODE
频带:VERY HIGH FREQUENCYJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):225最大功率耗散:0.28 W
认证状态:Not Qualified表面贴装:NO
技术:POSITIVE-INTRINSIC-NEGATIVE端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MPN3700RLRM 数据手册

 浏览型号MPN3700RLRM的Datasheet PDF文件第2页浏览型号MPN3700RLRM的Datasheet PDF文件第3页浏览型号MPN3700RLRM的Datasheet PDF文件第4页 
MMBV3700LT1, MPN3700  
High Voltage Silicon Pin  
Diodes  
These devices are designed primarily for VHF band switching  
applications but are also suitable for use in general−purpose switching  
circuits. They are supplied in a cost−effective plastic package for  
economical, high−volume consumer and industrial requirements.  
They are also available in surface mount.  
http://onsemi.com  
SOT−23  
Features  
1
Anode  
3
Cathode  
Long Reverse Recovery Time t = 300 ns (Typ)  
Rugged PIN Structure Coupled with Wirebond Construction for  
Optimum Reliability  
rr  
MARKING  
DIAGRAM  
Low Series Resistance @ 100 MHz −  
R = 0.7 W (Typ) @ I = 10 mAdc  
S
F
SOT−23 (TO236AB)  
CASE 31808  
STYLE 8  
Reverse Breakdown Voltage = 200 V (Min)  
Pb−Free Packages are Available  
3
4R M G  
G
1
MAXIMUM RATINGS  
1
2
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
V
P
20  
Vdc  
4R = Specific Device Code  
R
D
M
= Date Code*  
Forward Power Dissipation  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
@ T = 25°C  
MMBV3700LT1  
200  
2.8  
mW  
mW/°C  
A
Derate above 25°C  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Forward Power Dissipation  
P
D
@ T = 25°C  
MPN3700  
280  
2.8  
mW  
mW/°C  
A
Derate above 25°C  
TO−92  
Junction Temperature  
T
+125  
°C  
°C  
J
Storage Temperature Range  
T
stg  
−55 to +150  
1
Anode  
2
Cathode  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MARKING  
DIAGRAM  
MPN  
3700  
AYWW G  
G
TO−92 (TO−226AC)  
CASE 182−06  
STYLE 1  
1
2
MPN  
= Device Code  
3700  
A
Y
= Specific Device  
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 3  
MMBV3700LT1/D  

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