Datasheet > MPN7302-0805-2

MPN7302-0805-2

更新时间： 2024-11-21 14:55:55

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描述
Silicon PIN Diode

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MPN7302-0805-2 数据手册

Silicon Mesa PIN Diode

MPN7302-0805-2

Rev. V1

Features

•

Low Capacitance

Fast Switching

Passivated Mesa Construction

RoHS* Compliant

Description

The MPN7302-0805-2 silicon PIN diode features a

fully passivated mesa design with tri-metalization for

reliable operation under the most demanding

conditions. This diode provides low capacitance and

fast switching for switches, phase shifters,

modulators and high speed attenuators.

0805-2

Electrical Specifications: T_A= +25°C

Parameter

Voltage Breakdown

Junction Capacitance

Parasitic Capacitance

Parasitic Inductance

Series Resistance

Lifetime

Test Conditions

Units

Min.

Typ.

—

Max.

—

I_R= 10 µA

V_R= 10 V, 1 MHz

—

Ω

0.14

0.1

0.3

1.2

0.22

—

I_F= 10 mA, 500 MHz

I_F= 10 mA, I_R= 6 mA

1.5

—

Absolute Maximum Ratings^1,2

Parameter

Absolute Maximum

0.5 Watts @ 25ºC Derate

linearly to zero @ +175ºC

Ordering Information

Part Number

Total Power Dissipation

Package

Operating Temperature

Storage Temperature

-65°C to +175°C

-65°C to +200°C

MPN7302-0805-2

bulk

1. Exceeding any one or combination of these limits may cause

permanent damage to this device.

2. MACOM does not recommend sustained operation near these

survivability limits.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0029470

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