Silicon Mesa PIN Diode
MPN7302-0805-2
Rev. V1
Features
•
•
•
•
Low Capacitance
Fast Switching
Passivated Mesa Construction
RoHS* Compliant
Description
The MPN7302-0805-2 silicon PIN diode features a
fully passivated mesa design with tri-metalization for
reliable operation under the most demanding
conditions. This diode provides low capacitance and
fast switching for switches, phase shifters,
modulators and high speed attenuators.
0805-2
Electrical Specifications: TA = +25°C
Parameter
Voltage Breakdown
Junction Capacitance
Parasitic Capacitance
Parasitic Inductance
Series Resistance
Lifetime
Test Conditions
Units
V
Min.
Typ.
—
Max.
—
IR = 10 µA
VR = 10 V, 1 MHz
—
20
—
—
—
—
—
pF
pF
nH
Ω
0.14
0.1
0.3
1.2
8
0.22
—
—
—
IF = 10 mA, 500 MHz
IF = 10 mA, IR = 6 mA
1.5
—
ns
Absolute Maximum Ratings1,2
Parameter
Absolute Maximum
0.5 Watts @ 25ºC Derate
linearly to zero @ +175ºC
Ordering Information
Part Number
Total Power Dissipation
Package
Operating Temperature
Storage Temperature
-65°C to +175°C
-65°C to +200°C
MPN7302-0805-2
bulk
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near these
survivability limits.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0029470