Datasheet > MPND4005-B16

MPND4005-B16

更新时间： 2024-11-09 01:12:39

品牌	Logo	应用领域
泰科 - TE		测试二极管
页数	文件大小	规格书
3页	502K
描述
Planar Beam Lead PIN Diode

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MPND4005-B16 数据手册

MPND4005-x

Planar Beam Lead PIN Diode

Rev. V1

Features



Single / Common-Anode Configurations

4 Gram Minimum Lead Pull

Oxide / Nitride / Polyimide Triple Passivation for

High Reliability

Description

The planar beam lead PIN diodes provide low

microwave capacitance with exceptional lead

strength. The high beam strength offers the users

superior assembly yield. The oxide / nitride /

polyimide passivation offers high reliability with low

reverse leakage current and high temperature

performance.

Electrical Specifications¹: T_A= +25°C

Reverse

Current

(I_R)

Breakdown

Voltage

(V_BR

Junction

Capacitance

(C_J)

Series

Resistance

(R_S)

Lifetime

)

(t)

V_R= 30 V

I_R= 10 µA

V_R= 10 V, 15 GHz I_F= 20 mA, 3 GHz

Part #

Configuration

Max.

Min.

Max.

Typ.

MPND4005-B15

MPND4005-B16 Common Anode

Single

100

0.02

6.5

125

1. All devices available in a variety of packages. Consult factory for special version, high reliability screening or custom designs.

Absolute Maximum Ratings

Parameter

Absolute Maximum

Total Power Dissipation

Operating Temperature

Storage Temperature

Terminal Strength

250 mW @ 25°C, Derate linearly to 0 @ +175°C

-65°C to +175°C

-65°C to +200°C

4 grams minimum

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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