MPF930RL

更新时间： 2024-09-14 13:00:51

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体小信号场效应晶体管开关
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4页	88K
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MPF930RL 数据手册

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SEMICONDUCTOR TECHNICAL DATA

N–Channel — Enhancement

3 DRAIN

GATE

1 SOURCE

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage

Symbol

MPF930

MPF960

MPF990

Unit

Vdc

Gate–Source Voltage

— Continuous

— Non–repetitive (t ≤ 50 µs)

±20

±40

Vdc

Vpk

CASE 29–05, STYLE 22

TO–92 (TO–226AE)

GSM

Drain Current

Adc

(1)

Continuous

(2)

2.0

3.0

Pulsed

Total Device Dissipation

@ T = 25°C

1.0

8.0

Watts

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to 150

°C

Thermal Resistance

125

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

Vdc

(BR)DSX

= 0, I = 10 µAdc)

MPF930

MPF960

MPF990

—

Gate Reverse Current (V

= 15 Vdc, V

= 0)

—

nAdc

GSS

(2)

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

(V = Maximum Rating, V

—

µAdc

Vdc

DSS

= 0)

DS GS

Gate Threshold Voltage

(I = 1.0 mAdc, V

1.0

3.5

GS(Th)

= V

)

Drain–Source On–Voltage (V

(I = 0.5 Adc)

= 10 Vdc)

Vdc

DS(on)

MPF930

MPF960

MPF990

—

0.4

0.6

0.7

0.8

1.2

(I = 1.0 Adc)

MPF930

MPF960

MPF990

—

0.9

1.2

1.4

1.7

2.4

(I = 2.0 Adc)

MPF930

MPF960

MPF990

—

2.2

2.8

3.0

3.5

4.8

1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

REV 2

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₇Signal Transistors, FETs and Diodes Device Data

12 3 4

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