Datasheet > MP4TD0835T

MP4TD0835T

更新时间： 2024-02-13 13:53:37

品牌	Logo	应用领域
MPLUSE		放大器
页数	文件大小	规格书
3页	50K
描述
Silicon Bipolar MMIC Cascadable Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MP4TD0835T 数据手册

M-Pulse Microwave

Silicon Bipolar MMIC

Cascadable Amplifier

MP4TD0835, MP4TD0836

Features

• Cascadable 50Ω Gain Block

Ceramic Microstrip Package Outline^1,2,3

Available in short lead version as MP4TD0836.

GND

• High Gain: 32.5 dB Typical Gain @ 0.1 GHz

18.5 dB Typical Gain @ 1.0 GHz

• Low Noise Figure: 3.2 dB Typical @ 1.0 GHz

• Cost Effective Ceramic Microstrip Package

• Tape and Reel Packaging Available

• Unconditionally Stable @ k>1

.085

2,16

.020

0,51

RF OUT

AND BIAS

RF INPUT

Description

M-Pulse's MP4TD0835 and MP4TD0836 are high

performance silicon bipolar MMIC housed in a cost

effective ceramic microstrip package. The MP4TD0835

and MP4TD0836 are designed for use where a low

noise (3.2 dB typical) general purpose 50Ω gain block is

required. Typical applications include narrow and wide

band IF and RF amplifiers in industrial and military

applications.

GND

.100

2,55

.083

.022

0,56

2,11

.057

1,45

The MP4TD0835 and MP4TD0836 are fabricated using

.455±.030

1,56 ±0,76

±.002

.006

a 10 GHz f silicon bipolar technology that features gold

MA4TD0835

0,15±0,05

0.018 ±0.010

4,57 ±0,25 MA4TD0836

metalization and IC passivation for increased

performance and reliability.

Notes: (unless otherwise specified)

1. Dimensions are in / mm

2. Tolerance: in .xxx = ±.005; mm .xx = ±.13

3. See last page of data sheet for short lead Micro-X

TYPICAL POWER GAIN vs FREQUENCY

Id=36mA

Pin Configuration

Pin Number

Pin Description

RF Input

AC/DC Ground

2 & 4

RF Output and DC Bias

0.1

FREQUENCY (GH z)

Electrical Specifications @ T_A= +25°C, I = 36 mA, Z = 50 Ω

Symbol

Parameters

Power Gain (⏐S₂₁⏐ )

Test Conditions

f = 0.1 GHz

f = 1.0 GHz

f = 4.0 GHz

Units

Min.

17.5

Typ.

32.5

18.5

7.0

Max.

19.0

SWRin

SWRout

P_{1 dB}

Input SWR

Output SWR

f = 0.3 to 3.0 GHz

f = 0.4 to 3.0 GHz

2.0

1.5

13.5

3.2

Output Power @ 1 dB Gain Compression f = 1.0 GHz

50 Ω Noise Figure

dBm

f = 1.0 GHz

IP₃

t_D

dV/dT

Third Order Intercept Point

Group Delay

Device Voltage

Device Voltage Temperature Coefficient

f = 1.0 GHz

dBm

27.0

125

7.8

7.0

8.4

-17.0

mV/°C

Specification Subject to Change Without Notice

M-Pulse Microwave __________________________________________________________________________________

PH (408) 432-1480 FX (408) 432-3440

12 3

中文翻译

下载PDF

与MP4TD0835T相关器件

型号	品牌	获取价格	描述	数据表
MP4TD0836	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0836T	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0870	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0870T	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0900	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0900G	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0900W	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0910	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0910T	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0920	MPLUSE	获取价格	Silicon Bipolar MMIC Cascadable Amplifier

产品中心

服务支持

精选活动

关于我们

帮助中心

MP4TD0835T

MP4TD0835T 数据手册

与MP4TD0835T相关器件

与MP4TD0835T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MP4TD0835T

MP4TD0835T 数据手册

与MP4TD0835T相关器件

与MP4TD0835T相关文章

您还可以找

您在本页遇到什么问题？