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MP4TD0935T PDF预览

MP4TD0935T

更新时间： 2024-01-31 16:45:48
品牌 Logo 应用领域
MPLUSE 放大器
页数 文件大小 规格书
3页 51K
描述
Silicon Bipolar MMIC Cascadable Amplifier

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MP4TD0935T 数据手册

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M-Pulse Microwave  
Silicon Bipolar MMIC  
Cascadable Amplifier  
MP4TD0935, MP4TD0936  
Features  
Ceramic Microstrip Case Style Outlines1,2,3  
Available in short lead version as MP4TD0936.  
• Cascadable 50Ω Gain Block  
• 3dB Bandwidth: DC to 4.5 GHz  
• 8.0 dB Typical Gain @ 1.0 GHz  
• Low SWR: <1.9 from 0.1 to 3.0 GHz  
• Cost Effective Ceramic Microstrip Package  
• Tape and Reel Packaging Available  
4
GND  
.085  
2,15  
.020  
0,508  
RF OUT  
AND BIAS  
RF INPUT  
Description  
1
3
M-Pulse's MP4TD0935 and MP4TD0936 are high  
performance silicon bipolar MMICs housed in a cost  
effective ceramic microstrip packages. The MP4TD0935  
and MP4TD0936 are designed for use where a general  
purpose 50Ω gain block is required. Typical applications  
include narrow and wide band IF and RF amplifiers in  
industrial and military applications.  
2
GND  
.100  
2,54  
.083  
2,11  
ø
.022  
0,56  
The MP4TD0935 and MP4TD0936 are fabricated using a  
10 GHz f silicon bipolar technology that features gold  
metalization and IC passivation for increased performance  
and reliability.  
T
.057  
1,45  
.455 ±.030  
11,54 ±0,76  
MA4TD0935  
.006 ±.002  
0,15 ±0,05  
TYPICAL POWER GAIN vs FREQUENCY  
0.180±0.010  
4.57 ±0,25  
MA4TD0936  
12  
Id=35mA  
10  
Notes: (unless otherwise specified)  
1. Dimensions are in / mm  
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13  
3. See last page of data sheet for short lead Micro-X  
8
6
4
2
0
Pin Configuration  
Pin Number  
Pin Description  
RF Input  
0.1  
1
10  
1
FREQUENCY (GH z)  
2 & 4  
3
AC/DC Ground  
RF Output and DC Bias  
Electrical Specifications @ TA = +25°C, I = 35 mA, Z = 50Ω  
d
0
Symbol  
Parameters  
Test Conditions  
Units  
dB  
dB  
GHz  
-
-
dBm  
dB  
dBm  
ps  
Min.  
7.0  
-
-
-
-
-
-
Typ.  
8.0  
+ 0.4  
4.5  
1.9  
1.4  
11.5  
6.0  
23.0  
100  
7.8  
Max.  
9.0  
+ 0.6  
-
-
-
-
-
2
Gp  
f = 0.1 GHz  
f = 0.1 to 3.0 GHz  
-
f = 0.1 to 3.0 GHz  
f = 0.1 to 3.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
-
Power Gain (⏐S ⏐ )  
21  
Gain Flatness  
3 dB Bandwidth  
Input SWR  
ΔGp  
f3dB  
SWRin  
SWRout  
P1dB  
NF  
IP3  
tD  
Vd  
dV/dT  
Output SWR  
Output Power @ 1dB Gain Compression  
50 Ω Noise Figure  
Third Order Intercept Point  
Group Delay  
-
-
-
-
Device Voltage  
V
7.0  
-
8.6  
-
Device Voltage Temperature Coefficient  
-
-16.0  
mV/°C  
Specification Subject to Change Without Notice  
M-Pulse Microwave __________________________________________________________________________________  
1
PH (408) 432-1480 FX (408) 432-3440  
123

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