M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1135, MP4TD1136
Features
• High Dynamic Range Cascadable
50Ω/75Ω Gain Block
Ceramic Microstrip Case Style Outlines1,2,3
Available in short lead version as MP4TD1136.
4
GND
• 3dB Bandwidth: 50 MHz to 1.0 GHz
• 17 dBm Typical P1dB @ 0.7 GHz
• 11 dB Typical Gain @ 0.5 GHz
• 4.0 dB Typical Noise Figre @ 0.7 GHz
• Cost Effective Ceramic Microstrip Package
• Tape and Reel Packaging Available
.085
2,15
.020
0,508
RF OUT
AND BIAS
RF INPUT
1
3
Description
M-Pulse's MP4TD1135 and MP4TD1136 are high
performance silicon bipolar MMICs housed in cost effective
2
GND
ceramic microstrip packages.
The MP4TD1135 and
MP4TD1136 are designed for use in 50Ω or 75Ω systems
where a high dynamic range gain block is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
.100
2,54
.083
ø
2,11
.022
0,56
.057
1,45
The MP4TD1135 and MP4TD1136 are fabricated using a
10 GHz f silicon bipolar technology that features gold
T
metalization and IC passivation for increased performance
and reliability.
.455 ±.030
11,54 ±0,76
MA4TD1135
.006 ±.002
0,15 ±0,05
0.180±0.010
4.57 ±0,25
MA4TD1136
TYPICAL POWER GAIN vs FREQUENCY
14
12
10
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
Id=60mA
8
6
4
2
0
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
Pin Description
RF Input
1
0.1
1
10
2 & 4
3
AC/DC Ground
RF Output and DC Bias
FREQUENCY (GHz)
Electrical Specifications @ TA = +25°C, I = 60 mA, Z = 50Ω
d
0
Symbol
Parameters
Test Conditions
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
Min.
11.5
-
-
-
-
16.0
-
-
-
4.5
-
Typ.
12.5
+ 0.9
1.0
2.0
1.9
17.0
4.0
30.0
160
5.5
Max.
13.5
+ 1.1
-
-
-
-
4.5
-
2
Gp
f = 0.1 GHz
f = 0.1 to 0.7 GHz
ref 50 MHz Gain
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
f = 0.7 GHz
f = 0.7 GHz
f = 1.0 GHz
f = 1.0 GHz
-
Power Gain (⏐S ⏐ )
21
Gain Flatness
3 dB Bandwidth
Input SWR
ΔGp
f3dB
SWRin
SWRout
P1dB
Output SWR
Output Power @ 1dB Gain Compression
NF
IP3
tD
Vd
50 Ω Noise Figure
Third Order Intercept Point
Group Delay
-
Device Voltage
V
6.5
-
dV/dT
Device Voltage Temperature Coefficient
-
-8.0
mV/°C
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
1
PH (408) 432-1480 FX (408) 432-3440