Datasheet > MP4TD1136

MP4TD1136

更新时间： 2024-02-28 01:56:15

品牌	Logo	应用领域
MPLUSE		放大器
页数	文件大小	规格书
3页	51K
描述
Silicon Bipolar MMIC Cascadable Amplifier

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MP4TD1136 数据手册

M-Pulse Microwave

Silicon Bipolar MMIC

Cascadable Amplifier

MP4TD1135, MP4TD1136

Features

• High Dynamic Range Cascadable

50Ω/75Ω Gain Block

Ceramic Microstrip Case Style Outlines^1,2,3

Available in short lead version as MP4TD1136.

GND

• 3dB Bandwidth: 50 MHz to 1.0 GHz

• 17 dBm Typical P_1dB@ 0.7 GHz

• 11 dB Typical Gain @ 0.5 GHz

• 4.0 dB Typical Noise Figre @ 0.7 GHz

• Cost Effective Ceramic Microstrip Package

• Tape and Reel Packaging Available

.085

2,15

.020

0,508

RF OUT

AND BIAS

RF INPUT

Description

M-Pulse's MP4TD1135 and MP4TD1136 are high

performance silicon bipolar MMICs housed in cost effective

GND

ceramic microstrip packages.

The MP4TD1135 and

MP4TD1136 are designed for use in 50Ω or 75Ω systems

where a high dynamic range gain block is required. Typical

applications include narrow and wide band IF and RF

amplifiers in industrial and military applications.

.100

2,54

.083

2,11

.022

0,56

.057

1,45

The MP4TD1135 and MP4TD1136 are fabricated using a

10 GHz f silicon bipolar technology that features gold

metalization and IC passivation for increased performance

and reliability.

.455 ±.030

11,54 ±0,76

MA4TD1135

.006 ±.002

0,15 ±0,05

0.180±0.010

4.57 ±0,25

MA4TD1136

TYPICAL POWER GAIN vs FREQUENCY

Notes: (unless otherwise specified)

1. Dimensions are in / mm

2. Tolerance: in .xxx = ±.005; mm .xx = ±.13

Id=60mA

3. See last page of data sheet for short lead Micro-X

Pin Configuration

Pin Number

Pin Description

RF Input

0.1

2 & 4

AC/DC Ground

RF Output and DC Bias

FREQUENCY (GHz)

Electrical Specifications @ T_A= +25°C, I = 60 mA, Z = 50Ω

Symbol

Parameters

Test Conditions

Units

GHz

dBm

Min.

11.5

16.0

4.5

Typ.

12.5

+ 0.9

1.0

2.0

1.9

17.0

4.0

30.0

160

5.5

Max.

13.5

+ 1.1

4.5

f = 0.1 GHz

f = 0.1 to 0.7 GHz

ref 50 MHz Gain

f = 0.1 to 2.0 GHz

f = 0.7 GHz

f = 1.0 GHz

Power Gain (⏐S ⏐ )

Gain Flatness

3 dB Bandwidth

Input SWR

ΔGp

f_3dB

SWRin

SWRout

P_1dB

Output SWR

Output Power @ 1dB Gain Compression

IP₃

t_D

50 Ω Noise Figure

Third Order Intercept Point

Group Delay

Device Voltage

6.5

dV/dT

Device Voltage Temperature Coefficient

-8.0

mV/°C

Specification Subject to Change Without Notice

M-Pulse Microwave __________________________________________________________________________________

PH (408) 432-1480 FX (408) 432-3440

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与MP4TD1136相关器件

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