5秒后页面跳转
MP4TD0920 PDF预览

MP4TD0920

更新时间: 2024-01-22 21:18:39
品牌 Logo 应用领域
MPLUSE 放大器
页数 文件大小 规格书
3页 51K
描述
Silicon Bipolar MMIC Cascadable Amplifier

MP4TD0920 数据手册

 浏览型号MP4TD0920的Datasheet PDF文件第2页浏览型号MP4TD0920的Datasheet PDF文件第3页 
M-Pulse Microwave  
Silicon Bipolar MMIC  
Cascadable Amplifier  
MP4TD0920  
Features  
Gold-BeO Microstrip Package Outline1,2  
Cascadable 50Ω Gain Block  
2
3dB Bandwidth: DC to 4.0 GHz  
7.5 dB Typical Gain @ 1.0 GHz  
Low SWR: <1.6:1 from 0.1 to 3.0 GHz  
Hermetic Gold-BeO Microstrip Package  
The 20 package allows higher power operation  
0.030  
0.762  
3
1
Description  
M-Pulse's MP4TD0920 is a high performance silicon bipolar  
MMIC housed in a hermetic high reliability package. The  
MP4TD0920 is designed for use where a general purpose 50Ω  
gain block is required. Typical applications include narrow and  
wide band IF and RF amplifiers in industrial and military  
applications. The 20 style package is a superior thermal  
dissipation package. This allows larger DC Current and the  
4
0.30  
7.62  
TYP.  
0.060  
1.525  
0.053  
1.35  
resultant improvement in ouput power and P  
performance  
0.132  
5.42  
DIA  
1dB  
than that available from the packages for this chip.  
The MP4TD0920 is fabricated using a 10 GHz f silicon bipolar  
T
0.205  
5.21  
DIA  
technology that features gold metalization and IC passivation  
for increased performance and reliability.  
0.003  
0.076  
0.020  
0.51  
Notes: (unless otherwise specified)  
1. Dimensions are in / mm  
TYPICAL POWER GAIN vs FREQUENCY  
12  
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13  
Id=35mA  
10  
Pin Configuration  
Pin Number  
8
6
4
2
0
Pin Description  
RF Input  
AC/DC Ground  
1
2 & 4  
3
RF Output and DC Bias  
Ordering Information  
Model No.  
0.1  
1
10  
FREQUENCY (GH z)  
Package  
MP4TD0920  
BeO Ceramic  
Electrical Specifications @ TA = +25°C, I = 35 mA, Z = 50Ω  
d
0
Symbol  
Parameters  
Test Conditions  
Units  
dB  
dB  
GHz  
-
-
dBm  
dB  
dBm  
ps  
Min.  
6.5  
-
-
-
-
-
-
Typ.  
7.5  
±0.5  
4.0  
1.4  
1.6  
11.5  
6.0  
23.0  
100  
7.8  
Max.  
8.5  
±0.7  
-
-
-
-
-
2
Gp  
Power Gain (S21)  
Gain Flatness  
3 dB Bandwidth  
Input SWR  
f = 0.1 GHz  
f = 0.1 to 2.0 GHz  
-
f = 0.1 to 3.0 GHz  
f = 0.1 to 3.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
-
ΔGp  
f3 dB  
SWRin  
SWRout  
P1 dB  
NF  
IP3  
tD  
Vd  
dV/dT  
Output SWR  
Output Power @ 1 dB Gain Compression  
50 Ω Noise Figure  
Third Order Intercept Point  
Group Delay  
-
-
-
-
Device Voltage  
V
7.0  
-
8.6  
-
Device Voltage Temperature Coefficient  
-
-16.0  
mV/°C  
Specification Subject to Change Without Notice  
M-Pulse Microwave __________________________________________________________________________________  
1
PH (408) 432-1480 FX (408) 432-3440  

与MP4TD0920相关器件

型号 品牌 获取价格 描述 数据表
MP4TD0935 MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0935T MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0936 MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0936T MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0970 MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0970T MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100 MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100G MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100W MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1110 MPLUSE

获取价格

Silicon Bipolar MMIC Cascadable Amplifier