Datasheet > MMUN2134

MMUN2134

更新时间： 2024-02-07 00:14:21

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
7页	261K
描述
Bias Resistor Transistor

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技术参数
数据手册

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MMUN2134 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MMUN2134 数据手册

LESHAN RADIO COMPANY, LTD.

MMUN2111RLT1 SERIES

DEVICE MARKING AND RESISTOR VALUES (Continued)

Device

Marking

A6F

R1 (K)

R2 (K)

(2)

MMUN2116RLT1

MMUN2130RLT1

MMUN2131RLT1

MMUN2132RLT1

MMUN2133RLT1

MMUN2134RLT1

4.7

1.0

2.2

4.7

A6G

A6H

1.0

2.2

4.7

A6J

A6K

A6L

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (V_CB=50V, I _E= 0)

Collector-Emitter Cutoff Current (V_CE= 50 V, I_B= 0)

I_CBO

I_CEO

I _EBO

100

500

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

nAdc

mAdc

Emitter-Base Cutoff Current

(V_EB= 6.0 V, I_C= 0)

MMUN2111RLT1

MMUN2112RLT1

MMUN2113RLT1

MMUN2114RLT1

MMUN2115RLT1

MMUN2116RLT1

MMUN2130RLT1

MMUN2131RLT1

MMUN2132RLT1

MMUN2133RLT1

MMUN2134RLT1

Collector-Base Breakdown Voltage (I_C= 10 µA, I_E= 0)

V_(BR)CBO

V_(BR)CEO

Vdc

(3)

Collector-Emitter Breakdown Voltage (I_C=2.0mA, I_B=0)

(3)

ON CHARACTERISTICS

DC Current Gain

MMUN2111RLT1

MMUN2112RLT1

MMUN2113RLT1

MMUN2114RLT1

MMUN2115RLT1

MMUN2116RLT1

MMUN2130RLT1

MMUN2131RLT1

MMUN2132RLT1

MMUN2133RLT1

MMUN2134RLT1

h_FE

160

3.0

8.0

100

140

250

5.0

(V_CE= 10 V, I_C= 5.0 mA)

140

130

Collector-Emitter Saturation Voltage (I_C=10mA, I_E=0.3mA)

(I_C= 10 mA, I_B= 5 mA) MMUN2130RLT1 MMUN2131RLT1

(I_C= 10 mA, I_B= 1 mA) MMUN2115RLT1 MMUN2116RLT1

MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1

Output Voltage (on)

V_CE(sat)

0.25

Vdc

V_OL

(V_CC=5.0V,V_B=2.5V, R_L=1.0kΩ)

MMUN2111RLT1

MMUN2112RLT1

MMUN2114RLT1

MMUN2115RLT1

MMUN2116RLT1

MMUN2130RLT1

MMUN2131RLT1

MMUN2132RLT1

MMUN2133RLT1

MMUN2134RLT1

MMUN2113RLT1

0.2

(V_CC=5.0V,V_B=3.5V, R_L= 1.0kΩ)

2. New devices. Updated curves to follow in subsequent data sheets.

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

2-446 LRC Small-Signal Transistors, FETs and Diodes Device Data

Q1–2/7

123 4 5 6 7

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