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MMUN2211

更新时间： 2024-01-28 21:56:01
品牌 Logo 应用领域
ETL 晶体晶体管
页数 文件大小 规格书
8页 269K
描述
Bias Resistor Transistor

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MMUN2211 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：35JEDEC-95代码：TO-236AB
JESD-30 代码：R-PDSO-G3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
功耗环境最大值：0.2 W认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMUN2211 数据手册

 浏览型号MMUN2211的Datasheet PDF文件第2页浏览型号MMUN2211的Datasheet PDF文件第3页浏览型号MMUN2211的Datasheet PDF文件第4页浏览型号MMUN2211的Datasheet PDF文件第5页浏览型号MMUN2211的Datasheet PDF文件第6页浏览型号MMUN2211的Datasheet PDF文件第7页 
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor with  
MMUN2211RLT1  
MMUN2212RLT1  
MMUN2213RLT1  
MMUN2214RLT1  
MMUN2215RLT1  
MMUN2230RLT1  
MMUN2231RLT1  
MMUN2232RLT1  
MMUN2233RL34  
Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single device and its  
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single  
transistor with a monolithic bias network consisting of two resistors; a series base  
resistor and a base-emitter resistor.The BRT eliminates these individual components  
by integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SOT-23 package which is  
designed for low power surface mount applications.  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
The SOT-23 package can be soldered using wave or  
reflow. The modified gull-winged leads absorb thermal  
stress during soldering eliminating the possibility of  
damage to the die.  
Available in 8 mm embossed tape and reel. Use the  
Device Number to order the 7 inch/3000 unit reel.  
NPN SILICON  
BIAS RESISTOR  
TRANSISTOR  
Replace “T1” with “T3” in the Device Number to order  
the 13 inch/10,000 unit reel.  
PIN3  
Collector  
(output)  
3
PIN1  
base  
R1  
(Input)  
R2  
1
PIN2  
Emitter  
2
(Ground)  
CASE 318–08, STYLE 6  
SOT– 23 (TO–236AB)  
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)  
Rating  
Symbol  
VCBO  
V CEO  
IC  
Value  
Unit  
Vdc  
Collector-Base Voltage  
50  
50  
Collector-Emitter Voltage  
Vdc  
Collector Current  
Total Power Dissipation @ T A = 25°C (1)  
100  
200  
1.6  
mAdc  
mW  
P D  
Derate above 25°C  
mW/°C  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
RθJA  
Value  
625  
Unit  
°C/W  
°C  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
Operating and Storage Temperature Range  
Maximum Temperature for Soldering Purposes  
Time in Solder Bath  
TJ , Tstg  
–65 to +150  
260  
°C  
T L  
10  
Sec  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
MMUN2211RLT1  
A8A  
10  
10  
MMUN2212RLT1  
MMUN2213RLT1  
MMUN2214RLT1  
MMUN2215RLT1(2)  
MMUN2216RLT1(2)  
MMUN2230RLT1(2)  
MMUN2231RLT1(2)  
MMUN2232RLT1(2)  
MMUN2233RLT1(2)  
MMUN2234RLT1(2)  
A8B  
A8C  
A8D  
A8E  
A8F  
A8G  
A8H  
A8J  
A8K  
A8L  
22  
47  
10  
10  
4.7  
1
22  
47  
47  
1
2.2  
4.7  
4.7  
22  
2.2  
4.7  
47  
47  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
Q2–1/8  
12345678

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