Datasheet > MMUN2211LT1G_10

MMUN2211LT1G_10

更新时间： 2024-02-10 04:10:02

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
18页	168K
描述
Bias Resistor Transistor NPN Silicon Surface Mount Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMUN2211LT1G_10 数据手册

MMUN2211LT1G Series

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SOT-23 package which is designed for low power surface mount

applications.

http://onsemi.com

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

• Simplifies Circuit Design

• Reduces Board Space and Component Count

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING DIAGRAM

A8x M G

SOT−23

CASE 318

STYLE 6

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

A8x = Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Symbol

Max

Unit

Total Device Dissipation

246 (Note 1)

400 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

T = 25°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 17 of this data sheet.

Derate above 25°C

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Lead

508 (Note 1)

311 (Note 2)

174 (Note 1)

208 (Note 2)

°C/W

°C

Junction and Storage Temperature

Range

T , T

−55 to +150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ minimum pad

2. FR−4 @ 1.0 x 1.0 inch pad

Publication Order Number:

October, 2010 − Rev. 11

MMUN2211LT1/D

12 3 4 5 6 7...18

中文翻译

下载PDF

与MMUN2211LT1G_10相关器件

型号	品牌	获取价格	描述	数据表
MMUN2211LT3	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2211LT3G	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2211RLT1	ETL	获取价格	Bias Resistor Transistor
MMUN2211RLT1	LRC	获取价格	Bias Resistor Transistor
MMUN2211T1	MOTOROLA	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2211T3	MOTOROLA	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMUN2212	WEITRON	获取价格	Bias Resistor Transistor NPN Silicon
MMUN2212L	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
MMUN2212LT1	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2212LT1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR

与MMUN2211LT1G_10相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

10
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

10
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

12
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

14

产品中心

服务支持

精选活动

关于我们

帮助中心

MMUN2211LT1G_10

MMUN2211LT1G_10 数据手册

与MMUN2211LT1G_10相关器件

与MMUN2211LT1G_10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMUN2211LT1G_10

MMUN2211LT1G_10 数据手册

与MMUN2211LT1G_10相关器件

与MMUN2211LT1G_10相关文章

您还可以找

您在本页遇到什么问题？