Datasheet > MMUN2134LT1

MMUN2134LT1

更新时间： 2024-01-19 12:59:09

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
12页	122K
描述
PNP SILICON BIAS RESISTOR TRANSISTOR

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技术参数
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MMUN2134LT1 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	SOT-23	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	0.76	其他特性：	BUILT-IN BIAS RESISTOR RATIO 0.47
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	80
JEDEC-95代码：	TO-236AB	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.4 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signals	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MMUN2134LT1 数据手册

MMUN2111LT1 Series

Preferred Devices

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

http://onsemi.com

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SOT-23 package can be soldered using wave or reflow. The

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel. Use the Device Number

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the

Device Number to order the 13 inch/10,000 unit reel.

SOT–23

CASE 318

STYLE 6

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

MARKING DIAGRAM

CBO

CEO

Vdc

100

mAdc

A6x

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

A6x

Page 2)

= Device Marking

= A – L (See

Total Device Dissipation

246 (Note 1.)

400 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

= 25°C

Derate above 25°C

°C/W

°C

= Date Code

Thermal Resistance –

Junction-to-Ambient

508 (Note 1.)

311 (Note 2.)

θJA

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Thermal Resistance –

Junction-to-Lead

174 (Note 1.)

208 (Note 2.)

θJL

Junction and Storage

Temperature Range

T , T

J stg

–55 to +150

Preferred devices are recommended choices for future use

and best overall value.

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev. 2

MMUN2111LT1/D

12 3 4 5 6 7...12

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与MMUN2134LT1相关器件

型号	品牌	描述	获取价格	数据表
MMUN2134LT1G	ONSEMI	PNP 双极数字晶体管 (BRT)	获取价格
MMUN2134LT3	LRC	Bias Resistor Transistors	获取价格
MMUN2134RLT1	LRC	Bias Resistor Transistor	获取价格
MMUN2135L	ONSEMI	PNP Transistors with Monolithic Bias Resistor Network	获取价格
MMUN2135LT1G	ONSEMI	PNP Transistors with Monolithic Bias Resistor Network	获取价格
MMUN2136L	ONSEMI	Digital Transistors (BRT)	获取价格

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