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MMUN21XXLT3 PDF预览

MMUN21XXLT3

更新时间: 2024-01-20 00:20:14
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 90K
描述
Bias Resistor Transistors

MMUN21XXLT3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMUN21XXLT3 数据手册

 浏览型号MMUN21XXLT3的Datasheet PDF文件第2页浏览型号MMUN21XXLT3的Datasheet PDF文件第3页浏览型号MMUN21XXLT3的Datasheet PDF文件第4页浏览型号MMUN21XXLT3的Datasheet PDF文件第5页浏览型号MMUN21XXLT3的Datasheet PDF文件第6页浏览型号MMUN21XXLT3的Datasheet PDF文件第7页 
MMUN2111LT1 Series  
Preferred Devices  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the SOT-23  
package which is designed for low power surface mount applications.  
http://onsemi.com  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
MARKING  
DIAGRAM  
The SOT-23 package can be soldered using wave or reflow. The  
modified gull-winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
3
SOT−23  
CASE 318  
STYLE 6  
A6x M G  
Available in 8 mm embossed tape and reel.  
Pb−Free Packages are Available  
G
1
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
A6x  
x
M
G
= Device Code  
= A − L (Refer to page 2)  
= Date Code*  
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
CEO  
= Pb−Free Package  
50  
Vdc  
(Note: Microdot may be in either location)  
I
100  
mAdc  
C
*Date Code orientation may vary depending  
upon manufacturing location.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Total Device Dissipation  
P
246 (Note 1)  
400 (Note 2)  
1.5 (Note 1)  
2.0 (Note 2)  
mW  
D
T = 25°C  
A
Device  
Package  
Shipping  
°C/W  
°C/W  
°C/W  
°C  
Derate above 25°C  
MMUN21xxLT1  
SOT−23  
3000/Tape & Reel  
MMUN21xxLT1G  
SOT−23  
3000/Tape & Reel  
Thermal Resistance,  
Junction-to-Ambient  
R
q
508 (Note 1)  
311 (Note 2)  
JA  
(Pb−Free)  
MMUN21xxLT3  
SOT−23 10000/Tape & Reel  
Thermal Resistance,  
Junction-to-Lead  
R
q
174 (Note 1)  
208 (Note 2)  
JL  
MMUN21xxLT3G  
SOT−23 10000/Tape & Reel  
(Pb−Free)  
Junction and Storage,  
Temperature Range  
T , T  
J
55 to +150  
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 5  
MMUN2111LT1/D  
 

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