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MMT10B350T3 PDF预览

MMT10B350T3

更新时间: 2024-10-28 03:48:55
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管高压
页数 文件大小 规格书
5页 58K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

MMT10B350T3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-214包装说明:CASE 403C, SMT, SMB, 2 PIN
针数:2Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.8
其他特性:UL RECOGNIZED最大转折电压:400 V
配置:SINGLE最大断态直流电压:300 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
子类别:Silicon Surge Protectors表面贴装:YES
端子面层:Tin/Lead (Sn80Pb20)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
触发设备类型:SILICON SURGE PROTECTOR

MMT10B350T3 数据手册

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MMT10B350T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
http://onsemi.com  
(
)
BIDIRECTIONAL TSPD  
100 AMP SURGE, 350 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
Features  
High Surge Current Capability: 100 Amps 10 x 1000 msec, for  
Controlled Temperature Environments  
MT1  
MT2  
The MMT10B350T3 Series is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,  
IEC 950, UL 1459 & 1950 and FCC Part 68.  
Bidirectional Protection in a Single Device  
Little Change of Voltage Limit with Transient Amplitude or Rate  
Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
Surface Mount Technology (SMT)  
MARKING DIAGRAM  
Indicates UL Recognized − File #E210057  
Pb−Free Package is Available  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
AYWW  
RPDM G  
G
Rating  
Symbol Value Unit  
Off−State Voltage − Maximum  
V
300  
V
DM  
Maximum Pulse Surge Short Circuit Current  
Non−Repetitive  
A(pk)  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Double Exponential Decay Waveform  
(Notes 1 and 2)  
10 x 1000 msec  
−25°C Initial Temperature  
I
"100  
"500  
"200  
"180  
PPS1  
PPS2  
PPS3  
PPS4  
RPDM = Device Code  
I
I
I
2 x 10 msec  
G
= Pb−Free Package  
10 x 160 msec  
10 x 700 msec  
(Note: Microdot may be in either location)  
Maximum Non−Repetitive Rate of Change of  
On−State Current Double Exponential Waveform,  
R = 2.4 W, L = 2.0 mH, C = 2.0 mF, I = 110 A  
di/dt  
"100 A/ms  
ORDERING INFORMATION  
pk  
Device  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MMT10B350T3  
MMT10B350T3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
SMB  
(Pb−Free)  
1. Allow cooling before testing second polarity.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Measured under pulse conditions to reduce heating.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 2  
MMT10B350T3/D  
 

MMT10B350T3 替代型号

型号 品牌 替代类型 描述 数据表
MMT10B350T3G ONSEMI

完全替代

Thyristor Surge Protectors High Voltage Bidirectional TSPD
NP3500SCT3G ONSEMI

完全替代

Thyristor Surge Protectors High Voltage Bidirectional
TB3500H-13 DIODES

功能相似

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

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