Datasheet > MMT10P250L

MMT10P250L

更新时间： 2023-12-06 20:04:05

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	425K
描述
小信号金氧半電晶體

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MMT10P250L 数据手册

MMT10P250L

P-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

Gate

Applications

• Switching

Source

1. Gate 2. Source 3. Drain

DFN2020-3H Plastic Package

• Load Switch

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

-V_DS

V_GS

100

Drain-Source Voltage

Gate-Source Voltage

Drain Current

± 20

-I_D

Peak Drain Current, Pulsed ¹⁾

-I_DM

Power Dissipation ²⁾

P_tot

℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,limited by T_J(MAX)

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

R_θJA

125

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Dated: 03/06/2021 Rev:01

12 3 4 5 6

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