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MMT10V275 PDF预览

MMT10V275

更新时间: 2024-01-31 11:38:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
4页 93K
描述
BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE

MMT10V275 技术参数

生命周期:Obsolete包装说明:SPECIAL SHAPE, S-XDSS-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84最大转折电压:275 V
配置:SINGLE最大断态直流电压:200 V
JESD-30 代码:S-XDSS-N2通态非重复峰值电流:100 A
元件数量:1端子数量:2
最大通态电压:4 V最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SPECIAL SHAPE
认证状态:Not Qualified重复峰值反向电压:200 V
子类别:Silicon Surge Protectors表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

MMT10V275 数据手册

 浏览型号MMT10V275的Datasheet PDF文件第2页浏览型号MMT10V275的Datasheet PDF文件第3页浏览型号MMT10V275的Datasheet PDF文件第4页 
Order this document  
by MMT10V275/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola preferred devices  
High Voltage Bidirectional TVS Devices  
BIDIRECTIONAL  
THYRISTOR SURGE  
SUPPRESSORS  
These transient voltage suppression (TVS) devices prevent overvoltage  
damage to sensitive circuits by lightning, induction and power line crossings.  
They are breakover–triggered crowbar protectors. Turn–off occurs when the  
surge current falls below the holding current value.  
25 WATTS STEADY STATE  
Applications include current loop lines in telephony and control systems,  
central office stations, repeaters, building and residence entrance terminals and  
electronic telecom equipment.  
High Surge Current Capability  
Bidirectional Protection in a Single Device  
Little Change of Voltage Limit with Transient Amplitude or Rate  
Freedom from Wearout Mechanisms Present in Non–Semiconductor De-  
vices  
Fail–Safe. Shorts When Overstressed, Preventing Continued Unprotected  
Operation.  
CASE 416A–01  
DEVICE RATINGS:  
40°C to 50°C for MMT10V275  
40°C to 65°C for MMT10V400 (except surge)  
Parameter  
Symbol  
Value  
Unit  
Peak Repetitive Off–State Voltage — Maximum  
V
DM  
Volts  
MMT10V275  
MMT10V400  
±200  
±265  
On–State Surge Current — Maximum Nonrepetitive (MMT10V400 20°C to 65°C)  
10 x 1000 µs exponential wave, Notes 1, 2, 3  
I
I
I
±100  
±10  
±1.0  
A(pk)  
A(rms)  
A(rms)  
TSM1  
STM2  
STM3  
60 Hz ac, 1000 V(rms), R = 1.0 k, 1 second  
S
60 Hz ac, 480 V(rms), R = 48 , 2 seconds  
S
Rate of Change of On–State Current — Maximum Nonrepetitive  
di/dt  
50  
A/µs  
Critical Damped Wave, C = 1.2 µF, L = 16 µH, R = 7.4,  
V
CI  
= 1000 V, I(pk) = 100 A (short circuit), 0 to 50% I (pk)  
DEVICE THERMAL RATINGS  
Operating Temperature Range  
Blocking or Conducting State  
T
T
40 to +125  
+175  
°C  
°C  
J1  
Overload Junction Temperature — Maximum  
Conducting State Only  
J2  
Thermal Resistance, Junction to Case — Maximum  
Thermal Resistance, Case to Ambient, Without Heatsink  
R
1.5  
°C/W  
°C/W  
θJC  
+200  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995  

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