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MMT10V275

更新时间： 2024-01-10 05:59:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
4页 93K
描述
BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE

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MMT10V275 技术参数

生命周期：Obsolete包装说明：SPECIAL SHAPE, S-XDSS-N2
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.84最大转折电压：275 V
配置：SINGLE最大断态直流电压：200 V
JESD-30 代码：S-XDSS-N2通态非重复峰值电流：100 A
元件数量：1端子数量：2
最大通态电压：4 V最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：UNSPECIFIED
封装形状：SQUARE封装形式：SPECIAL SHAPE
认证状态：Not Qualified重复峰值反向电压：200 V
子类别：Silicon Surge Protectors表面贴装：YES
端子形式：NO LEAD端子位置：DUAL
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

MMT10V275 数据手册

 浏览型号MMT10V275的Datasheet PDF文件第1页浏览型号MMT10V275的Datasheet PDF文件第3页浏览型号MMT10V275的Datasheet PDF文件第4页 
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Characteristics  
Symbol  
Min  
Typ  
Max  
Unit  
Breakover Voltage  
(dv/dt = 100 V/µs, I  
V
Volts  
(BO)1  
= 10 A, Vdc = 1000 V)  
MMT10V275  
MMT10V400  
—
—
—
—
275  
400  
SC  
Breakover Voltage  
V
Volts  
(BO)2  
(f = 60 Hz, I  
SC  
= 1.0 A(rms), V  
OC  
= 1000 V(rms),  
MMT10V275  
MMT10V400  
—
—
—
—
275  
400  
R = 1.0 kΩ, t = 0.5 cycle, Note 2)  
I
Breakover Voltage Temperature Coefficient  
dV /dT  
(BO)  
—
0.05  
—
%/°C  
J
Breakdown Voltage  
V
(BR)  
Volts  
(I  
(BR)  
= 1.0 mA)  
MMT10V275  
MMT10V400  
200  
265  
—
—
—
—
Breakdown Voltage Temperature Coefficient  
Off State Current (V = 160 V)  
dV  
/dT  
(BO)  
—
—
—
0.11  
—
—
%/°C  
µA  
J
I
D
3.0  
4.0  
D
On–State Voltage (I = 10 A)  
T
(PW ≤ 300 µs, Duty Cycle ≤ 2%, Note 2)  
V
T
3.0  
Volts  
Breakover Current (f = 60 Hz, V  
Holding Current  
= 1000 V(rms), R = 1.0 kΩ)  
I
BO  
—
—
500  
400  
—
—
mA  
mA  
DM  
S
Note 2  
I
H
(10 x 100 Ms exponential wave, I = 10 A, V = 52 V, R = 200 Ω)  
T
S
Critical Rate of Rise of Off–State Voltage  
dv/dt  
2000  
—
—
—
—
V/µs  
(Linear waveform, V = 0.8 x Rated V  
, T = 125°C)  
DRM  
D
J
Capacitance (f = 1.0 MHz, 50 V, 15 mV)  
C
55  
pF  
O
1. Allow cooling before testing second polarity.  
2. Measured under pulse conditions to reduce heating.  
3. Requires θ  
≤ 6°C/W each side, infinite heatsink.  
CS  
R
R
R
R
R
R
θS(A2)  
θ
S(A1)  
θ
C(S1)  
θ
J(C1)  
θ
J(C2)  
θ
C(S2)  
T
T
T
T
T
T
T
A
S1  
C1  
J
C2  
S2  
A
P
D
Terms in the model signify:  
T
= Ambient Temp.  
= Heatsink Temp.  
= Case Temp.  
R
R
R
= Thermal Resistance, Heatsink to Ambient  
= Thermal Resistance, Case to Heatsink  
= Thermal Resistance, Junction to Case  
A
θSA  
θCS  
θJC  
T
S
T
C
T
J
= Junction Temp.  
P
D
= Power Dissipation  
Subscripts 1 and 2 denote the device terminals, MT1 and MT2, respectively.  
Thermal resistance values are:  
R
R
= 6°C/W maximum (each side)  
= 3°C/W maximum (each side)  
θCS  
θJC  
The R  
values are estimates for dry mounting with heatsinks contacting the  
θCS  
raised pedestal on the package. For minimum thermal resistance, the device  
shouldbe sandwiched between clean, flat, smooth conducting electrodes and  
securely held in place with a compressive force of 2 pounds maximum. The  
electrodes should contact the entire pedestal area. When the device is  
mounted symmetrically, the thermal resistances are identical. The values for  
R
andR  
arecontrolledbytheuseranddependonheatsinkdesignand  
θSA  
θCS  
mounting conditions.  
Figure 1. Thermal Circuit, Device Mounted Between Heatsinks  
2
Motorola Thyristor Device Data  
1234

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