生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 最大集电极电流 (IC): | 0.2 A |
基于收集器的最大容量: | 6 pF | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 150 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMST5086T246 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
MMST5086T247 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
MMST5087 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | SOT-23VAR | |
MMST5087T146 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
MMST5087T147 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
MMST5087T246 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
MMST5087T247 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
MMST5088 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | SOT-23VAR | |
MMST5088T146 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
MMST5088T147 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon |