Datasheet > MMST5401

MMST5401

更新时间： 2024-09-30 04:14:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	157K
描述
PNP General Purpose Transistor

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中文翻译

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数据手册

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MMST5401 数据手册

BL Galaxy Electrical

Production specification

PNP General Purpose Transistor

MMST5401

FEATURES

Lead-free

Epitaxial planar die construction.

Complementary NPN type available

(MMST5551).

Also available in lead free version.

APPLICATIONS

Ideal for medium power amplification and switching.

SOT-323

ORDERING INFORMATION

Type No.

Marking

K4M

Package Code

MMST5401

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

UNIT

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

Collector dissipation

junction and storage temperature

-160

-150

-5

-0.6

P_C

0.2

°C

T_j,T_stg

-55-150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Parameter

Test conditions

MIN. MAX. UNIT

Collector-base breakdown voltage

I_C=-100μA,I_E=0

-160

-150

-5

Collector-emitter breakdown voltage I_C=-1mA,I_B=0

Emitter-base breakdown voltage

collector cut-off current

I_E=-10μA,I_C=0

I_E= 0; V_CB= -120V

I_C= 0; V_EB= -4V

V_CE= -5V; I_C= -1mA

-0.1

μA

I_EBO

emitter cut-off current

h_FE

DC current gain

_CE= -5V;I_C= -10mA

_CE= -5V;I_C= -50 mA

250

V_CE(sat)

V_BE(sat)

collector-emitter saturation voltage

base-emitter saturation voltage

I_C= -50 mA; I_B= -5 mA

I_C= -10mA; V_CE= -5V;

f = 30MHz

-0.5

-1

f_T

transition frequency

100

MHz

Document number: BL/SSSTF055

Rev.A

www.galaxycn.com

12 3

中文翻译

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