Datasheet > MMST5401

MMST5401

更新时间： 2023-12-06 20:10:01

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	825K
描述
SOT-323

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中文翻译

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数据手册

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MMST5401 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

MMST5401 TRANSISTOR (PNP)

SOT–323

FEATURES

 Complementary to MMST5551

 Small Surface Mount Package

 Ideal for Medium Power Amplificationand Switching

MARKING:K4M

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-160

-150

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-600

200

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

625

R_ΘJA

Operation Junction and

Storage Temperature Range

℃

T_J,T_stg

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=-100µA, I_E=0

-160

Collector-base breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-1mA, I_B=0

-150

-5

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

V_CB=-120V, I_E=0

-50

I_EBO

V_EB=-3V, I_C=0

Emitter cut-off current

V_CE=-5V, I_C=-1mA

V_CE=-5V, I_C=-10mA

V_CE=-5V, I_C=-50mA

I_C=-50mA, I_B=-5mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

I_C=-10mA, I_B=-1mA

V_CE=-10V,I_C=-10mA , f=100MHz

V_CB=-10V, I_E=0, f=1MHz

100

h_FE

DC current gain

300

-0.5

-0.2

-1

V_CE(sat)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_BE(sat)

-1

f_T

100

MHz

Transition frequency

C_ob

Collector output capacitance

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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