Datasheet > MML60R190P

MML60R190P

更新时间： 2024-09-16 01:18:15

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1217K
描述
600V 0.19ohm N-channel MOSFET

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MML60R190P 数据手册

MML60R190P Datasheet

MML60R190P

600V 0.19Ω N-channel MOSFET

 Description

MML60R190P is power MOSFET using Magnachip’s advanced super junction technology that can

realize very low on-resistance and gate charge. It will provide much high efficiency by using Optimized

charge coupling technology. These user friendly devices give an advantage of Low EMI to designers

as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

650

0.19

Ω

I_D

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MML60R190PTH

60R190P

-55 ~ 150^oC

TO-262(A)

Tube

Compliant

May. 2018 Revision 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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