Datasheet > MMM5063R2

MMM5063R2

更新时间： 2024-11-05 14:53:51

品牌	Logo	应用领域
恩智浦 - NXP		高功率电源放大器射频微波功率放大器
页数	文件大小	规格书
20页	345K
描述
880MHz - 915MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, 7 X 7 MM, PLASTIC, CASE 1383, 15 PIN

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中文翻译

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技术参数
数据手册

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MMM5063R2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.15
其他特性：	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	11 dBm
最大工作频率：	915 MHz	最小工作频率：	880 MHz
最高工作温度：	100 °C	最低工作温度：	-35 °C
射频/微波设备类型：	NARROW BAND HIGH POWER	最大电压驻波比：	10
Base Number Matches：	1

MMM5063R2 数据手册

Advance Information

MMM5063/D

Rev. 0.2, 09/2003

Tri-Band GSM GPRS

3.5 V Power Amplifier

MMM5063

(Scale 1:1)

Package Information

Plastic Package

Case 1383

(Module, 7x7 mm)

Ordering Information

Device

MMM5063

Device Marking

Package

See Figure 25

Module

The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/

PCS1900 GPRS handheld radios. This fully integrated Power Amplifier uses a patented

concept to realize the 50 Ω matching on-chip through integration of passives on the GaAs

die. This allows module functionality in a very small 7 x 7 mm package and achieves best-in-

class Power Amplifier performance and multi-band capability.

Applications:

•

Tri-Band GSM900 DCS1800 and PCS1900

Guaranteed for 25% Duty Cycle

Features:

•

Single Supply Enhancement Mode GaAs MESFET Technology

Internal 50 Ω Input/Output Matching

High Gain Three Stage Amplifier Design

Typical 3.5 V Characteristics:

= 35.2 dBm, PAE = 53% for GSM

= 33.8 dBm, PAE = 44% for DCS

= 34 dBm, PAE = 43% for PCS

out

•

Optimized and Guaranteed for Open-Loop Power Control Applications

Small 7 x 7 mm Package

This document contains information on a pre-production product. Specifications and Pre-production information

12 3 4 5 6 7...20

中文翻译

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