Datasheet > MMDT3946

MMDT3946

更新时间： 2024-04-09 19:00:52

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	425K
描述
SOT-363

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中文翻译

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数据手册

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MMDT3946 数据手册

MMDT3946

■

TR1 NPN Pin1、2、6 Maximum Ratings (Ta=25℃Unless otherwise specified）

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Unit

Conditions

Value

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

I_C=10μA,I_E=0

I_C=1mA,I_B=0

I_E=10μA,I_C=0

Collector Current -Continuous

Total Device Dissipation

Junction Temperature

Storage Temperature

℃

200

P_C

200

150

T_STG

-55 to +150

℃

■

TR1 NPN Pin1、2、6 Electrical Characteristics (Ta=25℃unless otherwise specified)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Unit

Conditions

Min

TYP

Max

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC=10μA,IE=0

IC =1mA,IB=0

IE=10μA,IC=0

VCB=30V,IE=0

Collector cut-off current

I_CEO

VCE=30V,IB=0

Collector cut-off current

I_EBO

VEB=5V, IC=0

h_FE

VCE=1V,IC=0.1mA

VCE=1V,IC=1mA

VCE=1V,IC=10mA

VCE=1V,IC=50mA

VCE=1V,IC=100mA

IC=10mA,IB=1mA

IC=50mA,IB=5mA

IC=10mA,IB=1mA

IC=50mA,IB=5mA

VCE=20V,IC=20mA,f=100MHz

DC current gain

100

300

0.2

0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

0.65

300

0.85

0.95

V_BE(sat)

Transition frequency

Delay Time

MHz

200

VCC=3V, IC=10mA,

VBE=0.5V, IB1=1mA

Rise Time

Storage Time

Fall Time

VCC=3V, IC=10mA,

IB1=-IB2=1mA

Output capacitance

Cob

VCB=5V,IE=0A,f=1MHz

2 / 7

S-S3307

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,26-Dec-23

123 4 5 6 7

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