MMDT3946
■
TR2 PNP Pin3、4、5 Maximum Ratings (Ta=25℃Unless otherwise specified)
Item
Symbol
VCBO
VCEO
VEBO
IC
Unit
Conditions
Value
-40
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
IC=-10μA,IE=0
V
IC =-1mA,IB=0
IE=-10μA,IC=0
-40
V
-5
mA
mW
℃
-200
Total Device Dissipation
Junction Temperature
Storage Temperature
PC
200
Tj
150
TSTG
-55 to +150
℃
■
TR2 PNP Pin3、4、5 Electrical Characteristics (Ta=25℃unless otherwise specified)
Item
Symbol
VCBO
VCEO
VEBO
ICBO
Unit
Conditions
Min
-40
-40
-5
TYP
Max
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-Base cut-off current
Emitter-Base cut-off current
V
IC=-10μA,IE=0
V
IC =-1mA,IB=0
V
IE=-10μA,IC=0
nA
nA
VCB=-30V,IE=0
-50
-50
IEBO
VEB=-5V,IC=0
hFE
1
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
40
70
hFE
hFE
hFE
hFE
2
3
4
5
DC current gain
100
60
300
30
V
V
-0.25
-0.4
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
V
-0.65
250
-0.85
-0.95
VBE(sat)
V
VCE=-20V,IE=-
10mA,f=100MHz
Transition frequency
Delay Time
fT
td
MHz
ns
ns
ns
ns
pF
35
35
VCC=-3V, IC=-10mA, VBE=-
0.5V, IB1=-1mA
Rise Time
tr
Storage Time
Fall Time
ts
225
75
VCC=-3V, IC=-10mA, IB1=-
IB2=-1mA
tf
Output capacitance
Cob
VCB=-5V,IE=0A,f=1MHz
4.5
3 / 7
S-S3307
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,26-Dec-23