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MMDP-67204E-40SB/SC PDF预览

MMDP-67204E-40SB/SC

更新时间: 2024-11-15 14:43:39
品牌 Logo 应用领域
TEMIC 先进先出芯片光电二极管
页数 文件大小 规格书
15页 104K
描述
FIFO, 4KX9, 40ns, Asynchronous, CMOS, PDFP28, 400 MIL, FLAT PACK, 28 PIN

MMDP-67204E-40SB/SC 技术参数

生命周期:Transferred包装说明:400 MIL, FLAT PACK, 28 PIN
Reach Compliance Code:unknown风险等级:5.7
Is Samacsys:N最长访问时间:40 ns
周期时间:50 nsJESD-30 代码:R-PDFP-F28
内存密度:36864 bit内存宽度:9
功能数量:1端子数量:28
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4KX9
可输出:NO封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL认证状态:Not Qualified
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

MMDP-67204E-40SB/SC 数据手册

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M67204E  
4 K 9 CMOS Parallel FIFO Rad Tolerant  
Introduction  
The M67204E implement a first-in first-out algorithm, Using an array of eigh transistors (8 T) memory cell, the  
featuring asynchronous read/write operations. The FULL M67204E combine an extremely low standby supply  
and EMPTY flags prevent data overflow and underflow. current (typ = 1.0 µA) with a fast access time at 40 ns  
The Expansion logic allows unlimited expansion in word over the full temperature range. All versions offer battery  
size and depth with no timing penalties. Twin address backup data retention capability with a typical power  
pointers automatically generate internal read and write consumption at less than 2 µW.  
addresses, and no external address information are  
The M67204E is processed according to the methods of  
required for the TEMIC FIFOs. Address pointers are  
the latest revision of the MIL STD 883 (class B or S), ESA  
automatically incremented with the write pin and read  
SCC 9000 and QML.  
pin. The 9 bits wide data are used in data communications  
applications where a parity bit for error checking is  
necessary. The Retransmit pin resets the Read pointer to  
zero without affecting the write pointer. This is very  
useful for retransmitting data when an error is detected in  
the system.  
Features  
D First-in first-out dual port memory  
D 4096 × 9 organisation  
D Fully expandable by word width or depth  
D Asynchronous read/write operations  
D Empty, full and half flags in single device mode  
D Retransmit capability  
D Fast access time: 40, 50 ns  
D Wide temperature range : – 55 °C to + 125 °C  
D Bi-directional applications  
D Battery back-up operation 2 V data retention  
D TTL compatible  
D Single 5 V ± 10 % power supply  
D High performance SCMOS technology  
1
Rev. F – June 30, 1999  

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