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MMDP-67204EV-40/SB PDF预览

MMDP-67204EV-40/SB

更新时间: 2023-01-03 10:56:13
品牌 Logo 应用领域
TEMIC 先进先出芯片内存集成电路
页数 文件大小 规格书
15页 89K
描述
FIFO, 4KX9, 40ns, Asynchronous, CMOS, CDFP28

MMDP-67204EV-40/SB 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DFP, FL28,.4Reach Compliance Code:unknown
风险等级:5.62最长访问时间:40 ns
JESD-30 代码:R-XDFP-F28JESD-609代码:e0
内存密度:36864 bit内存集成电路类型:OTHER FIFO
内存宽度:9端子数量:28
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4KX9
封装主体材料:CERAMIC封装代码:DFP
封装等效代码:FL28,.4封装形状:RECTANGULAR
封装形式:FLATPACK电源:5 V
认证状态:Not Qualified最大待机电流:0.0015 A
子类别:FIFOs最大压摆率:0.135 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

MMDP-67204EV-40/SB 数据手册

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M67204E  
4 K 9 CMOS Parallel FIFO Rad Tolerant  
Introduction  
The M67204E implement a first-in first-out algorithm, Using an array of eigh transistors (8 T) memory cell, the  
featuring asynchronous read/write operations. The FULL M67204E combine an extremely low standby supply  
and EMPTY flags prevent data overflow and underflow. current (typ = 1.0 µA) with a fast access time at 40 ns  
The Expansion logic allows unlimited expansion in word over the full temperature range. All versions offer battery  
size and depth with no timing penalties. Twin address backup data retention capability with a typical power  
pointers automatically generate internal read and write consumption at less than 2 µW.  
addresses, and no external address information are  
The M67204E is processed according to the methods of  
required for the Atmel Wireless & Microcontrollers  
the latest revision of the MIL STD 883 (class B or S), ESA  
FIFOs. Address pointers are automatically incremented  
SCC 9000 and QML.  
with the write pin and read pin. The 9 bits wide data are  
used in data communications applications where a parity  
bit for error checking is necessary. The Retransmit pin  
resets the Read pointer to zero without affecting the write  
pointer. This is very useful for retransmitting data when  
an error is detected in the system.  
Features  
D First-in first-out dual port memory  
D 4096 × 9 organisation  
D Fully expandable by word width or depth  
D Asynchronous read/write operations  
D Empty, full and half flags in single device mode  
D Retransmit capability  
D Fast access time: 40, 50 ns  
D Wide temperature range : – 55 °C to + 125 °C  
D Bi-directional applications  
D Battery back-up operation 2 V data retention  
D TTL compatible  
D Single 5 V ± 10 % power supply  
D High performance SCMOS technology  
1
Rev. G – June 5, 2000  

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