Datasheet > MMBT5401

MMBT5401

更新时间： 2023-12-06 20:03:58

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1236K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBT5401 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBT5401

FEATURES

TRANSISTOR (PNP)

SOT–23



Complementary to MMBT5551

Ideal for Medium Power Amplification and Switching

MARKING: 2L

1. BASE

2 L

2L= Device code

2. EMITTER

Solid dot = Green molding compound device

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-160

-150

-5

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-0.6

0.3

P_C

Collector Power Dissipation

Thermal Resistance from Junction to Ambient

R_ΘJA

416

℃/W

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=-100µA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

-160

-150

-5

V_(BR)CEO

I_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-10µA, I_C=0

V_CB=-120V, I_E=0

-0.1

μA

Emitter cut-off current

I_EBO

V_EB=-4V, I_C=0

h_FE(1)

V_CE=-5V, I_C=-1mA

V_CE=-5V, I_C=-10mA

V_CE=-5V, I_C=-50mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

V_CE=-5V,I_C=-10mA, f=30MHz

100

DC current gain

h_FE(2)

300

h_FE(3)

V_CE(sat)1

-0.2

-0.5

-1

Collector-emitter saturation voltage

V_CE(sat)2

V_BE(sat)1

Base-emitter saturation voltage

Transition frequency

V_BE(sat)2

-1

f_T

100

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_{FE (2)}

RANK

RANGE

100-200

200-300

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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与MMBT5401相关器件

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MMBT5401/D87Z	TI	获取价格	200mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT5401/S62Z	TI	获取价格	200mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT5401_07	DIOTEC	获取价格	Surface Mount General Purpose Si-Epi-Planar Transistors
MMBT5401_08	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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MMBT5401_11	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5401_11	MCC	获取价格	PNP Plastic Encapsulate Transistor
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MMBT5401_15	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
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