Datasheet > MMBT3946DW1T1

MMBT3946DW1T1

更新时间： 2024-11-12 12:23:55

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
11页	402K
描述
Dual General Purpose Transistors

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MMBT3946DW1T1 数据手册

WILLAS

MMBT3946DW1T1

Transistors

Dual General Purpose

TheM MBT3946DW1T1 device is a spin–off of our popular

SOT–23/SOT–323 three–leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT–363

six–leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low–power surface mount

applications where board space is at a premium.

• h_FE, 100–300

• Low V_CE(sat), < 0.4 V

• Simplifies Circuit Design

SOT 363

• Reduces Board Space

• Reduces Component Count

•Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

• Device Marking:MMBT3946DW1T1 = 46

We declare that the material of product

compliance with RoHS requirements.

MAXIMUM RATINGS

Pb-Free package is available

Rating

Collector-Emitter Voltage

(NPN)

Symbol

Value

Unit

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

V _CEO

Vdc

(PNP)

-40

Collector-Base Voltage

(NPN)

V _CBO

V _EBO

I _C

Vdc

mAdc

(PNP)

-40

Q₁

Q₂

Emitter-Base Voltage

(NPN)

6.0

(PNP)

-5.0

Collector Current-Continuous

(NPN)

MMBT3946DW1T1*

*Q1 PNP

200

(PNP)

-200

Q2 NPN

Electrostatic Discharge

E_SDHBM>16000,

MM>2000

ORDERING INFORMATION

Device

Marking

Shipping

THERMAL CHARACTERISTICS

Characteristic

M MBT3946DW1T1

3000Units/Reel

Symbol

Max

Unit

Total Package Dissipation⁽¹⁾

P_D

150

T _A= 25°C

Thermal Resistance Junction

to Ambient

R_θJA

833

°C/W

Junction and Storage

Temperature Range

T_J,T_stg–55 to +150 °C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

1. recommended footprint.

2012-10

WILLAS ELECTRONIC CORP.

12 3 4 5 6 7...11

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