MMBR911LT1G

更新时间： 2024-01-24 06:52:35

品牌	Logo	应用领域
ADPOW		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
6页	148K
描述
NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR

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MMBR911LT1G 技术参数

MMBR911LT1

MMBR911LT1G

FUNCTIONAL TESTS

Symbol

Test Conditions

Value

Typ.

Unit

Min.

Max.

Gain @ Noise Figure

(I_C=10 mAdc, V_CE=10 Vdc)

G_NF

f=0.5 GHz

f=1.0 GHz

Noise Figure

(I_C=10 mAdc, V_CE=10 Vdc)

f=0.5 GHz

f=1.0 GHz

2.0

2.9

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

1 234 5 6

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