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MMBD914LT1G_09 PDF预览

MMBD914LT1G_09

更新时间： 2024-02-02 14:01:05
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
3页 115K
描述
High-Speed Switching Diode

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中文翻译

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MMBD914LT1G_09 数据手册

 浏览型号MMBD914LT1G_09的Datasheet PDF文件第2页浏览型号MMBD914LT1G_09的Datasheet PDF文件第3页 
MMBD914LT1G  
High-Speed Switching  
Diode  
Features  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
MAXIMUM RATINGS  
3
CATHODE  
1
ANODE  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
Forward Current  
V
100  
Vdc  
R
I
F
200  
500  
mAdc  
mAdc  
3
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
FM(surge)  
1
Symbol  
Max  
Unit  
2
Total Device Dissipation  
P
D
225  
mW  
FR−5 Board (Note 1)  
SOT−23  
CASE 318  
STYLE 8  
T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
Thermal Resistance, Junction−to−Ambient  
R
556  
300  
°C/W  
ꢀ
JA  
MARKING DIAGRAM  
Total Device Dissipation  
P
mW  
D
Alumina Substrate (Note 2)  
T = 25°C  
A
Derate above 25°C  
2.4  
mW/°C  
5D M G  
Thermal Resistance, Junction−to−Ambient  
G
R
417  
°C/W  
°C  
ꢀ
JA  
1
Junction and Storage Temperature  
Range  
T , T  
J
−55 to +150  
stg  
5D = Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Reverse Breakdown Voltage  
Symbol Min Max  
Unit  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
V
(BR)  
100  
−
Vdc  
MMBD914LT1G  
SOT−23  
3000/Tape & Reel  
(I = 100 ꢁ Adc)  
R
(Pb−Free)  
Reverse Voltage Leakage Current  
I
R
(V = 20 Vdc)  
25  
5.0  
nAdc  
ꢁ Adc  
MMBD914LT3G  
SOT−23 10,000/Tape & Reel  
(Pb−Free)  
−
−
R
(V = 75 Vdc)  
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Diode Capacitance  
C
V
−
−
−
4.0  
1.0  
4.0  
pF  
Vdc  
ns  
T
(V = 0, f = 1.0 MHz)  
R
Forward Voltage  
F
(I = 10 mAdc)  
F
Reverse Recovery Time  
t
rr  
(I = I = 10 mAdc) (Figure 1)  
F
R
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.  
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 − Rev. 6  
MMBD914LT1/D  
 
123

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