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MMBD914 PDF预览

MMBD914

更新时间: 2024-02-16 23:45:48
品牌 Logo 应用领域
美微科 - MCC 二极管光电二极管PC
页数 文件大小 规格书
2页 83K
描述
350mW 100 Volt Silicon Epitaxial Diode

MMBD914 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.88
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-609代码:e0
元件数量:1最高工作温度:150 °C
最大输出电流:0.2 A最大重复峰值反向电压:70 V
最大反向恢复时间:0.015 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

MMBD914 数据手册

 浏览型号MMBD914的Datasheet PDF文件第2页 
M C C  
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21201 Itasca Street Chatsworth  
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MMBD914  
Features  
·
·
·
Low Current Leakage  
Low Cost  
Small Outline Surface Mount Package  
350mW 100 Volt  
Silicon Epitaxial Diode  
C
Pin Configuration  
Top View  
5 D  
A
SOT-23  
A
D
Maximum Ratings  
B
C
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 357K/W Junction To Ambient  
F
E
H
G
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
Peak Reverse  
Voltage  
Average Rectified  
Current  
Power Dissipation  
Junction  
Temperature  
Peak Forward Surge  
Current  
VR  
VRM  
75V  
100V  
DIMENSIONS  
MM  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
IO  
150mA Resistive Load  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
f > 50Hz  
PTOT  
TJ  
350mW  
175°C  
F
G
H
J
IFSM  
VF  
IR  
1.0A  
.855V  
25nA  
t=1s,Non-Repetitive  
.085  
.37  
K
Maximum  
Suggested Solder  
Pad Layout  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
IFM = 10mA;  
TJ = 25°C*  
.031  
.800  
TJ = 25°C  
VR =20Volts  
.035  
.900  
.079  
inches  
mm  
CJ  
Trr  
2pF  
4nS  
Measured at  
1.0MHz, VR=0V  
IF=10mA  
VR = 6V  
RL=100W  
2.000  
.037  
.950  
.037  
.950  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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