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MMBD701LT3G PDF预览

MMBD701LT3G

更新时间： 2024-01-24 23:25:03
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 65K
描述
Silicon Hot−Carrier Diodes Schottky Barrier Diodes

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中文翻译

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MMBD701LT3G 数据手册

 浏览型号MMBD701LT3G的Datasheet PDF文件第2页浏览型号MMBD701LT3G的Datasheet PDF文件第3页浏览型号MMBD701LT3G的Datasheet PDF文件第4页 
MBD701, MMBD701LT1  
Preferred Device  
Silicon Hot−Carrier Diodes  
Schottky Barrier Diodes  
These devices are designed primarily for high−efficiency UHF and  
VHF detector applications. They are readily adaptable to many other  
fast switching RF and digital applications. They are supplied in an  
inexpensive plastic package for low−cost, high−volume consumer  
and industrial/commercial requirements. They are also available in a  
Surface Mount package.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Features  
TO−92 2−Lead  
CASE 182  
STYLE 1  
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)  
MBD  
701  
• Very Low Capacitance − 1.0 pF @ V = 20 V  
R
AYWW G  
• High Reverse Voltage − to 70 V  
• Low Reverse Leakage − 200 nA (Max)  
• Pb−Free Packages are Available  
1
G
2
2
1
CATHODE  
ANODE  
MAXIMUM RATINGS  
SOT−23 (TO−236)  
CASE 318  
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
3
STYLE 6  
V
R
70  
V
1
5H M G  
G
Forward Power Dissipation  
P
F
2
@ T = 25°C  
MBD701  
280  
200  
mW  
3
1
A
1
MMBD701LT  
CATHODE  
ANODE  
Derate above 25°C  
MBD701  
MMBD701LT  
2.8  
2.0  
mW/°C  
°C  
A
Y
= Assembly Location  
= Year  
Operating Junction Temperature  
Range  
T
J
−55 to +125  
WW = Work Week  
5H = Device Code (SOT−23)  
Storage Temperature Range  
T
stg  
−55 to +150  
°C  
M
= Date Code*  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may vary  
dependingupon manufacturing location.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
ORDERING INFORMATION  
Characteristic  
Symbol Min Typ Max  
Unit  
†
Device  
MBD701  
Package  
Shipping  
Reverse Breakdown Voltage  
V
(BR)R  
70  
−
−
V
TO−92  
1,000 Units / Box  
1,000 Units / Box  
(I = 10 mAdc)  
R
MBD701G  
TO−92  
(Pb−Free)  
Total Capacitance  
C
T
−
0.5  
1.0  
pF  
nAdc  
Vdc  
Vdc  
(V = 20 V, f = 1.0 MHz) Figure 1  
R
MMBD701LT1  
SOT−23 3,000 / Tape & Reel  
Reverse Leakage  
I
−
9.0 200  
0.42 0.5  
R
MMBD701LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
(V = 35 V) Figure 3  
R
Forward Voltage  
V
V
−
F
MMBD701LT3  
SOT−23 10,000/Tape & Reel  
(I = 1.0 mAdc) Figure 4  
F
MMBD701LT3G  
SOT−23 10,000/Tape & Reel  
(Pb−Free)  
Forward Voltage  
−
0.7  
1.0  
F
(I = 10 mAdc) Figure 4  
F
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 4  
MBD701/D  
1234

中文翻译

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MMBD701LT3G 替代型号

型号 品牌 替代类型 描述 数据表
MMBD701LT3G ONSEMI

当前型号

 Silicon Hot−Carrier Diodes Schottky Barrier Diodes
MMBD701LT3 ONSEMI

功能相似

 Silicon Hot−Carrier Diodes Schottky Barrier Diodes
MMBD701LT1G ONSEMI

完全替代

 Silicon Hot−Carrier Diodes Schottky Barrier Diodes
MMBD701LT1 ONSEMI

完全替代

 SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

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