Datasheet > MMBD717

MMBD717

更新时间： 2024-09-23 22:46:07

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
8页	61K
描述
Common Anode Schottky Barrier Diodes

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数据手册

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MMBD717 数据手册

ON Semiconductort

MMBD717LT1

ON Semiconductor Preferred Device

Common Anode

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

20 VOLT

SCHOTTKY BARRIER

DETECTOR AND SWITCHING

DIODES

• Extremely Fast Switching Speed

• Extremely Low Forward Voltage — 0.28 Volts (Typ) @ I = 1 mAdc

CATHODE

ANODE

CATHODE

CASE 419–04, STYLE 4

SOT–323 (SC–70)

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Volts

Forward Power Dissipation

@ T = 25°C

200

1.6

mW/°C

Derate above 25°C

Operating Junction

Temperature Range

°C

–55 to +150

Storage Temperature Range

DEVICE MARKING

MMBD717LT1 = B3

stg

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(I = 10 µA)

—

Volts

(BR)R

Total Capacitance

(V = 1.0 V, f = 1.0 MHz)

—

2.0

2.5

1.0

Reverse Leakage (V = 10 V)

(For each individual diode while the second diode is unbiased)

0.05

0.28

µAdc

Vdc

Forward Voltage

(I = 1.0 mAdc)

0.37

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev. 6

MMBD717LT1/D

12 3 4 5 6 7 8

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