MMBD7048DW
Silicon Epitaxial Planar Switching Diode
Features
• Low Capacitance
• Fast Switching Speed
4
5
6
Applications
• Base Stations
• I2C Bus Protection
1. VN 2. I/O 3. VP
4. N/C 5. I/O 6. N/C
SOT-363 Plastic package
• Video Line Protection
1
3
2
• T1/E1 Secondary IC Protection
• T3/E3 Secondary IC Protection
• Microcontroller Input Protection
• HDSL, IDSL Secondary IC Protection
Absolute Maximum Ratings (Ta = 25
)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
Reverse Voltage
VRRM
VR
85
85
V
V
Average Forward Current(Single Diode)
Peak Forward Current(Single Diode)
IF(AV)
IFM
150
300
mA
mA
at t = 1 µs
at t = 1 ms
at t = 1 s
4
1
0.5
Non-Repetitive Peak Forward Surge Current
Power Dissipation
IFSM
A
PD
200
mW
Operating Junction and Storage Temperature Range
Tj, Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJA
Value
625
Unit
/W
Thermal Resistance from Junction Ambient 1)
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
1/ 4
®
Dated: 06/06/2023 Rev:02