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MMBD4448HTA-TP PDF预览

MMBD4448HTA-TP

更新时间: 2024-11-25 21:15:07
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 208K
描述
Rectifier Diode, 2 Element, 0.25A, 80V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-3

MMBD4448HTA-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:1.55配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.15 W
认证状态:Not Qualified最大重复峰值反向电压:80 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MMBD4448HTA-TP 数据手册

 浏览型号MMBD4448HTA-TP的Datasheet PDF文件第2页浏览型号MMBD4448HTA-TP的Datasheet PDF文件第3页 
M C C  
MMBD4448HT/  
HTA/HTC/HTS  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
·
Fast Switching Speed  
For General Purpose Switching Applications  
High Conductance, Power Dissipation  
Ultra-Small Surface Mount Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
150mW  
Switching Diodes  
·
·
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
SOT-523  
A
D
Maximum Ratings  
Symbol  
VRM  
VRRM  
VRWM  
VR  
Rating  
Rating  
100  
Unit  
V
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
C
B
80  
V
E
VR(RMS)  
IFM  
IO  
RMS Reverse Voltage  
Forward Continuous Current  
Average Rectified Output Current  
57  
500  
250  
V
mA  
mA  
Peak Forward Surge Current @1.0Is  
4.0  
2.0  
IFSM  
A
@1.0s  
H
G
J
Thermal Resistance Junction to Ambient  
R/W  
mW  
R
R
PD  
TJ  
833  
150  
150  
E
JA  
Power dissipation  
Junction Temperature  
K
DIMENSIONS  
INCHES  
Storage Temperature  
R
TSTG  
-65 to +150  
MM  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
.059  
.030  
.057  
.020 Nominal  
.035  
.000  
.028  
.004  
.010  
MAX  
.067  
.033  
.069  
MIN  
1.50  
0.75  
1.45  
MAX  
1.70  
0.85  
1.75  
NOTE  
Symbol  
V(BR)  
Parameter  
Min  
Max  
---  
Test Conditions  
Reverse Breakdown Voltage  
80V  
IR=2.5IA  
0.50Nominal  
0.90  
.043  
.004  
.031  
.008  
.014  
1.10  
VR=70V  
VR=20V  
Reverse Voltage Leakage  
Current  
0.1IA  
25 nA  
IR  
---  
.000  
.70  
.100  
.25  
.100  
0.80  
.200  
.35  
0.62  
---  
---  
0.72V  
0.855V  
1.0V  
IF=5.0mA  
IF=10mA  
VF  
Forward Voltage  
IF=100mA  
IF=150mA  
VR=6V, f=1MHZ  
IF=5mA,  
---  
1.25V  
3.5pF  
CT  
trr  
Total Capacitance  
---  
VR=6V  
Reverse Recovery Time  
---  
4.0ns  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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