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MMBD4448HTS PDF预览

MMBD4448HTS

更新时间: 2024-09-22 22:46:07
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
2页 170K
描述
SURFACE MOUNT FAST SWITCHING DIODE

MMBD4448HTS 数据手册

 浏览型号MMBD4448HTS的Datasheet PDF文件第2页 
MMBD4448HT /HTA /HTC /HTS  
SURFACE MOUNT FAST SWITCHING DIODE  
Features  
SOT-523  
·
·
·
·
Ultra-Small Surface Mount Package  
Fast Switching Speed  
For General Purpose Switching Applications  
High Conductance  
Dim Min Max Typ  
A
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
C
B
TOP VIEW  
Mechanical Data  
¾
¾
0.50  
E
B
·
Case: SOT-523, Molded Plastic  
Case Material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
G
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
H
·
K
M
N
·
·
K
L
J
L
D
·
·
Polarity: See Diagrams Below  
Marking: See Diagrams Below & Page 2  
M
N
a
0°  
8°  
¾
All Dimensions in mm  
MMBD4448HTS Marking: AB  
MMBD4448HTC Marking: A7  
MMBD4448HTA Marking: A6  
@ TA = 25°C unless otherwise specified  
MMBD4448HT Marking: A3  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
80  
VR(RMS)  
IFM  
RMS Reverse Voltage  
57  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
500  
250  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
4.0  
2.0  
IFSM  
Pd  
A
@ t = 1.0s  
Power Dissipation (Note 1)  
150  
833  
mW  
°C/W  
°C  
R
qJA  
Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
Electrical Characteristics@ T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 2.5mA  
80  
¾
V
IF = 5.0mA  
IF = 10mA  
IF = 100mA  
IF = 150mA  
0.62  
¾
0.72  
0.855  
1.0  
VF  
Forward Voltage (Note 2)  
Leakage Current (Note 2)  
V
¾
¾
1.25  
VR = 70V  
100  
50  
30  
25  
nA  
mA  
mA  
nA  
VR = 75V, Tj = 150°C  
VR = 25V, Tj = 150°C  
VR = 20V  
IR  
¾
VR = 6V, f = 1.0MHz  
VR = 6V, IF = 5mA  
CT  
trr  
Total Capacitance  
¾
¾
3.5  
4.0  
pF  
ns  
Reverse Recovery Time  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30263 Rev. 5 - 2  
1 of 2  
MMBD4448HT /HTA /HTC /HTS  

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