Datasheet > MMBD4448HTW

MMBD4448HTW

更新时间： 2024-11-25 10:52:47

品牌	Logo	应用领域
SECOS		二极管开关光电二极管
页数	文件大小	规格书
2页	318K
描述
Surface Mount Switching Diode Array

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中文翻译

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技术参数
数据手册

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MMBD4448HTW 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.82

MMBD4448HTW 数据手册

MMBD4448HAQW

ADW/CDW/SDW/TW

Surface Mount Switching Diode Array

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-363

FEATURES

8^o

.055(1.40)

.047(1.20)

.026TYP

(0.65TYP)

Fast Switching Speed

.021REF

(0.525)REF

Ultra-Small Surface Mount Package

High Conductance Power dissipation

.053(1.35)

.045(1.15)

.096(2.45)

.085(2.15)

.018(0.46)

.010(0.26)

MECHANICAL DATA

.014(0.35)

.006(0.15)

.003(0.08)

Case: SOT-363, Molded Plastic

.087(2.20)

.079(2.00)

Terminals: Solderable per MIL-STD-202,

Method 208

.004(0.10)

.000(0.00)

Polarity: See Diagrams Below

Weight: 0.006 grams (approx.)

Mounting Position: Any

.043(1.10)

.035(0.90)

.039(1.00)

.035(0.90)

Dimensions in inches and (millimeters)

MMBD4448HAQW

Marking: KA5

MMBD4448HADW

Marking: KA6

MMBD4448HCDW

Marking: KA7

MMBD4448HSDW

Marking: KAB

MMBD4448HTW

Marking: KAA

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

RMS Reverse Voltage

100

RRM

R(RMS)

Average Rectified out Current(Note 1)

Forward Continuous Current (Note 1)

250

500

°C/W

Thermal Resistance Junction to Ambient Air (Note1)

Storage Temperature Range

625

thJA

stg

–55 to +150

°C

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)

Symbol

Max

Unit

Characteristic

Min

Reverse Breakdown Voltage (Note 2)

V(BR)R

Forward Voltage (Note 2)

IF=5.0mA

0.62

—

0.72

0.855

1.0

IF=10mA

IF=100mA

IF=150mA

—

1.25

Reverse Current (Note 2)

VR=70V

—

100

VR=75V, Tj=150^OC

VR=25V, Tj=150^OC

VR=20V

—

Total Capacitance VR=6V, f=1.0MHz

3.5

Reverse Recovery Time IF=IR=10mA, Irr=0.1XIR,RL=100 Ohms

4.0

—

Note 2. S hort duration test pulse used to minimize self-heating.

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jan-2006 Rev. B

Page 1 of 2

中文翻译

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与MMBD4448HTW相关器件

型号	品牌	获取价格	描述	数据表
MMBD4448HTW-13	DIODES	获取价格	Rectifier Diode, 3 Element, 0.25A, 80V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
MMBD4448HTW-7	DIODES	获取价格	Rectifier Diode, 3 Element, 0.25A, 80V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
MMBD4448HTW-7-F	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE ARRAY
MMBD4448HTWGP	CHENMKO	获取价格	Diode,
MMBD4448HTWHE3	MCC	获取价格	Tape:3K/Reel,120K/Ctn;
MMBD4448HTWP	MCC	获取价格	DIODE 0.25 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Sign
MMBD4448HTWPT	CHENMKO	获取价格	SWITCHING DIODE ARRAY
MMBD4448HTW-T	MCC	获取价格	Diode,
MMBD4448HTW-TP	MCC	获取价格	Rectifier Diode, 3 Element, 0.25A, 80V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLAST
MMBD4448HTX	WILLAS	获取价格	SOT-523 Plastic-Encapsulate Diodes

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