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MMBD4448HTW PDF预览

MMBD4448HTW

更新时间: 2024-02-21 06:13:24
品牌 Logo 应用领域
SECOS 二极管开关光电二极管
页数 文件大小 规格书
2页 318K
描述
Surface Mount Switching Diode Array

MMBD4448HTW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.59配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJESD-30 代码:R-PDSO-G3
最大非重复峰值正向电流:4 A元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMBD4448HTW 数据手册

 浏览型号MMBD4448HTW的Datasheet PDF文件第2页 
MMBD4448HAQW  
ADW/CDW/SDW/TW  
Surface Mount Switching Diode Array  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
SOT-363  
FEATURES  
8o  
.055(1.40)  
.047(1.20)  
o
0
.026TYP  
(0.65TYP)  
·
·
·
Fast Switching Speed  
.021REF  
(0.525)REF  
Ultra-Small Surface Mount Package  
High Conductance Power dissipation  
.053(1.35)  
.045(1.15)  
.096(2.45)  
.085(2.15)  
.018(0.46)  
.010(0.26)  
MECHANICAL DATA  
.014(0.35)  
.006(0.15)  
.006(0.15)  
.003(0.08)  
·
·
Case: SOT-363, Molded Plastic  
.087(2.20)  
.079(2.00)  
Terminals: Solderable per MIL-STD-202,  
Method 208  
.004(0.10)  
.000(0.00)  
4
·
·
·
Polarity: See Diagrams Below  
Weight: 0.006 grams (approx.)  
Mounting Position: Any  
5
.043(1.10)  
.035(0.90)  
.039(1.00)  
.035(0.90)  
6
O
3
2
1
Dimensions in inches and (millimeters)  
6
1
5
2
4
5
4
3
4
3
6
5
4
3
5
2
6
1
4
6
5
6
1
3
2
1
2
1
2
3
MMBD4448HAQW  
Marking: KA5  
MMBD4448HADW  
Marking: KA6  
MMBD4448HCDW  
Marking: KA7  
MMBD4448HSDW  
Marking: KAB  
MMBD4448HTW  
Marking: KAA  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
Unit  
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
RMS Reverse Voltage  
V
100  
80  
V
V
V
RM  
V
RRM  
57  
V
I
R(RMS)  
Average Rectified out Current(Note 1)  
Forward Continuous Current (Note 1)  
mA  
mA  
250  
500  
o
I
FM  
R
°C/W  
Thermal Resistance Junction to Ambient Air (Note1)  
Storage Temperature Range  
625  
thJA  
T
stg  
55 to +150  
°C  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
A
Symbol  
Max  
Ð
Unit  
Characteristic  
Min  
80  
Reverse Breakdown Voltage (Note 2)  
V(BR)R  
V
Forward Voltage (Note 2)  
IF=5.0mA  
0.62  
0.72  
0.855  
1.0  
IF=10mA  
IF=100mA  
IF=150mA  
V
F
V
1.25  
Reverse Current (Note 2)  
VR=70V  
nA  
100  
VR=75V, Tj=150OC  
VR=25V, Tj=150OC  
VR=20V  
uA  
uA  
50  
30  
I
R
25  
nA  
pF  
Total Capacitance VR=6V, f=1.0MHz  
C
T
3.5  
t
Reverse Recovery Time IF=IR=10mA, Irr=0.1XIR,RL=100 Ohms  
rr  
4.0  
nS  
Note 2. S hort duration test pulse used to minimize self-heating.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jan-2006 Rev. B  
Page 1 of 2  

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