Datasheet > MMBD4448TA

MMBD4448TA

更新时间： 2024-11-25 05:49:19

品牌	Logo	应用领域
SECOS		二极管开关
页数	文件大小	规格书
2页	688K
描述
Plastic-Encapsulated Switching Diode

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MMBD4448TA 数据手册

MMBD4448T Series

Plastic-Encapsulated Switching Diode

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SOT-523

Fast switching speed

For general purpose switching applications

High conductance

Top View

C B

MARKING

Part

Name

MMBD4448T

MMBD4448TA

MMBD4448TC

MMBD4448TS

Marking

Circuit

Millimeter

Min.

0.00

0.28

0.10

REF.

Min.

Max.

1.70

1.75

0.85

0.90

1.10

0.33

Max.

0.15

0.40

0.20

1.50

1.45

0.75

0.70

0.90

0.25

0.75

0.85

ABSOLUTE MAXIMUM RATINGS (Single Diode @ Ta = 25°C)

Parameter

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

V_RM

Value

Unit

100

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

500

250

I_O

4.0

1.5

@ t = 1.0µs

@ t = 1.0s

Non-Repetitive Peak Forward Surge Current

I_FSM

Power Dissipation

P_D

150

833

℃ / W

℃

Thermal Resistance Junction to Ambient

Storage Temperature

R_θJA

T_STG

-65 ~ 150

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Parameters

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V_R

V_F1

V_F2

V_F3

V_F4

I_R= 2.5 µA

I_F= 5.0 mA

I_F= 10 mA

I_F= 100 mA

I_F= 150 mA

0.62

0.720

0.855

1.00

1.25

Forward Voltage (Note 2)

0.10

µA

V_R= 70 V

Peak Reverse Current (Note 2)

I_R

V_R= 20 V

Total Capacitance

C_T

t_RR

3.50

4.00

V_R= 6 V, f = 1.0 MHz

V_R= 6 V, I_F= 5.0 mA

Reverse Recovery Time

01-Jun-2008 Rev. A

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