Datasheet > MMBD4448HTX

MMBD4448HTX

更新时间： 2024-09-21 12:23:51

品牌	Logo	应用领域
威伦 - WILLAS		二极管
页数	文件大小	规格书
2页	361K
描述
SOT-523 Plastic-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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MMBD4448HTX 数据手册

MMBD4448HTx

WILLAS

SOT-523 Plastic-Encapsulate Diodes

SWITCHING DIODE

FEATURES

SOT-523

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1

℃

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

Parameter

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

V_RM

Limit

Unit

100

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

Peak Forward Surge Current @t=1.0μs

@t =1.0s

500

250

4.0

I_O

I_FSM

1.5

Power Dissipation

P_D

150

833

℃/W

℃

Thermal Resistance Junction to Ambient

Storage Temperature

R_θJA

T_STG

-55 ~+150

Electrical Ratings @Ta=25℃

Parameter

Symbol

V_R

V_F1

Min

Typ

Max

Unit

Conditions

I_R=2.5μA

I_F=5mA

Reverse breakdown voltage

0.62

0.72

0.855

1.0

1.25

0.1

V_F2

V_F3

V_F4

I_R1

I_R2

C_T

t_rr

I_F=10mA

Forward voltage

Reverse current

I_F=100mA

I_F=150mA

V_R=70V

μA

V_R=20V

3.5

Capacitance between terminals

V_R=6V,f=1MHz

V_R=6V,I_F=5mA

Reverse recovery time

2012-12

WILLAS ELECTRONIC CORP.

中文翻译

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