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MMBD4448HTS-T1 PDF预览

MMBD4448HTS-T1

更新时间: 2024-01-19 06:12:01
品牌 Logo 应用领域
WTE 光电二极管
页数 文件大小 规格书
4页 86K
描述
Rectifier Diode, 2 Element, 0.25A, 80V V(RRM), Silicon,

MMBD4448HTS-T1 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.15 W最大重复峰值反向电压:80 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

MMBD4448HTS-T1 数据手册

 浏览型号MMBD4448HTS-T1的Datasheet PDF文件第2页浏览型号MMBD4448HTS-T1的Datasheet PDF文件第3页浏览型号MMBD4448HTS-T1的Datasheet PDF文件第4页 
®
MMBD4448HT / HTA / HTC / HTS  
SURFACE MOUNT FAST SWITCHING DIODE  
WON-TOP ELECTRONICS  
Features  
Single and Dual Diode  
K
Fast Switching  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
A
B
For General Purpose Switching Applications  
Plastic Material – UL Recognition Flammability  
Classification 94V-0  
C
L
D
G
E
SOT-523  
Min  
Dim  
Max  
0.30  
0.85  
1.75  
Mechanical Data  
A
B
C
D
E
G
H
J
0.15  
H
Case: SOT-523, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
0.75  
1.45  
J
0.50 Typical  
0.90  
1.50  
0.60  
0.02  
0.10  
0.10  
1.10  
1.70  
0.80  
0.10  
0.30  
0.20  
Polarity: See Diagrams Below  
Weight: 0.002 grams (approx.)  
Marking: Device Code, See Page 3  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
K
L
All Dimensions in mm  
TOP VIEW  
MMBD4448HT  
TOP VIEW  
MMBD4448HTA  
TOP VIEW  
MMBD4448HTC  
TOP VIEW  
MMBD4448HTS  
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Non-Repetitive Peak Reverse Voltage  
VRSM  
100  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
80  
V
Repetitive Peak Forward Current  
Continuous Forward Current  
IFRM  
IO  
500  
250  
mA  
mA  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0µs  
@ t = 1.0s  
4.0  
1.0  
IFSM  
A
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
°C  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
150  
Unit  
mW  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient (Note 1)  
RθJA  
833  
°C/W  
Note: 1. Mounted on FR-4 PC board with minimum recommended pad layout.  
© Won-Top Electronics Co., Ltd.  
Revision: May, 2014  
www.wontop.com  
1

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