Datasheet > MM25G3T120B

MM25G3T120B

更新时间： 2024-09-14 17:15:55

品牌	Logo	应用领域
宏微 - MACMIC		双极性晶体管
页数	文件大小	规格书
5页	171K
描述
M3i-低饱和压降型 IGBT 分立器件

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MM25G3T120B 数据手册

MM25G3T120B

1200V 25A IGBT

April 2018

Version 01

RoHS Compliant

PRODUCT FEATURES

□ IGBT chip in trench FS-technology

□ Low switching losses

□ V_CE(sat)with positive temperature coefficient

□ Fast switching and short tail current

□ Free wheeling diodes with fast and soft reverse recovery

APPLICATIONS

□ High frequency switching application

□ Medical applications

□ Motion/servo control

□ UPS systems

1.Gate

2.Collector

3.Emitter

V_CES

I_C

V_CE(sat)T_J=25°C

1.8V

T_Jmax

Type

Marking

MM25G3T120B

Package

TO-247

MM25G3T120B

1200V

25A

175°C

ABSOLUTE MAXIMUM RATINGS(T _C=25°C unless otherwise specified)

Symbol

V_CES

Parameter/Test Conditions

Values

1200

Unit

T_J=25℃

Collector Emitter Voltage

Gate Emitter Voltage

V_GES

±20

T_C=25℃

I_C

DC Collector Current

T_C=110℃

I_Cpuls

P_tot

Pulsed collector current,tp limited by T_Jmax

Power Dissipation Per IGBT

Repetitive Reverse Voltage

Average Forward Current

326

1200

V_RRM

I_F(AV)

I_Fpuls

T_Jmax

T_Jop

T_J=25℃

T_C=100℃

Diode pulsed current,tp limited by T_Jmax

Max. Junction Temperature

Operating Temperature

175

℃

-40~175

-55~150

T_stg

Storage Temperature

Torque to heatsink

Weight

Recommended（M3）

1.1

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

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