Datasheet > MM25G3U120BX

MM25G3U120BX

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
宏微 - MACMIC		双极性晶体管
页数	文件大小	规格书
5页	627K
描述
IGBT分立器件

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中文翻译

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数据手册

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MM25G3U120BX 数据手册

MM25G3U120BX

1200V 25A IGBT

June 2022

Version 02

RoHS Compliant

PRODUCT FEATURES

□ IGBT chip in trench FS-technology

□ Low switching losses

□ V_CE(sat)with positive temperature coefficient

□ Fast switching and short tail current

□ Free wheeling diodes with fast and soft reverse recovery

APPLICATIONS

□ High frequency switching application

□ Medical applications

□ Motion/servo control

□ UPS systems

1.Gate

2.Collector

3.Emitter

V_CES

MM25G3U120BX 1200V

I_C

V_CE(sat)T_J=25°C

2.15V

T_Jmax

Type

Marking

MM25G3U120BX

Package

TO-247

25A

175°C

ABSOLUTE MAXIMUM RATINGS(T _C=25°C unless otherwise specified)

Symbol

V_CES

Parameter/Test Conditions

Values

1200

±20

±30

Unit

T_J=25℃

Collector Emitter Voltage

Gate Emitter Voltage

V_GES

I_C

Transient Gate Emitter Voltage（tp≤10µs,D<0.01）

T_C=25℃

DC Collector Current

T_C=110℃

I_Cpuls

P_tot

Pulsed collector current,tp limited by T_Jmax

Power Dissipation Per IGBT

100

326

1200

V_RRM

T_J=25℃

T_C=25℃

T_C=110℃

Repetitive Reverse Voltage

I_F(AV)

Average Forward Current

I_fpuls

T_Jmax

T_Jop

T_stg

Diode pulsed current,tp limited by T_Jmax

Max. Junction Temperature

Operating Temperature

100

175

℃

-40~175

-55~150

1.1

Storage Temperature

Torque to heatsink

Weight

Recommended（M3）

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

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